Bi₂O₂Se Nanowire/MoSe₂ Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

Abstract

In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400–nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (−1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (−0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.

Environmental-Friendly Ag2S QD-Multilayer MoSe2 van Der Waals Heterostructure for High-Performance Broadband Photodetection

“…According to the above equation, the calculated W F of Ag 2 S QDs is 3.5 eV. Also, the W F of the multilayered MoSe 2 was reported to be at around 4.2 eV in the previous reports. , Additionally, the band gaps of multilayer MoSe 2 and Ag 2 S QDs were 1.1 and 0.9 eV, respectively. , The band energy alignment before contact is shown in Figure S3b, and a typical type-II energy-band alignment for MoSe 2 and Ag 2 S QDs was formed. Owing to the difference of work function in MoSe 2 and Ag 2 S QDs, the electrons of Ag 2 S QDs would transfer to MoSe 2 until an equilibrium state is achieved at the interface.…”

“…27 In addition, Gao et al reported a MoSe 2 /Bi 2 O 2 Se nanowire (2D/ 1D) NIR photodetector with a high rectification ratio of 10 3 , within the wavelength range of 405−808 nm. 28 However, due to the complicated interfaces, the complex manufacturing process, and the enhanced Auger scattering processes, 29−31 the devices based on 2D/3D, 2D/2D, and 2D/1D heterostructure still face performance limitation and a low yield of fabrication, which severely hinders their further application in the field of high-performance optoelectronics. In contrast, 0D/2D van der Waals heterostructure has the advantages of easier processing, weaker Coulombic interaction, and fewer interfacial states, 32−34 which shows enormous potential to fabricate high-performance photodetectors.…”

“…Constructing van der Waals heterostructure is a promising technique that can combine the features of different materials to improve the photodetector performance , and offers a vast opportunity for realizing high-performance electronic and optoelectronic devices. Recently, MoSe 2 -based van der Waals heterostructures for broadband photodetection have been reported, which integrate MoSe 2 with one-dimensional (1D) nanowires, 2D materials, and three-dimensional (3D) films to enhance the photodetection performance. − For instance, Das et al combined MoSe 2 and 3D Ge to realize a 2D/3D van der Waals heterostructure-based photodetector with a broadband response over 400–1800 nm, which showed a good responsivity of 24 A/W under 750 nm . Wang et al reported a 2D/2D van der Waals heterostructure based on MoSe 2 /PbSe 0.5 Te 0.5 , and the device has a photodetection range from visible to mid-infrared (0.4–5 μm), as well as a maximum responsivity of ∼17.5 A/W at a wavelength of 780 nm .…”

“…Wang et al reported a 2D/2D van der Waals heterostructure based on MoSe 2 /PbSe 0.5 Te 0.5 , and the device has a photodetection range from visible to mid-infrared (0.4–5 μm), as well as a maximum responsivity of ∼17.5 A/W at a wavelength of 780 nm . In addition, Gao et al reported a MoSe 2 /Bi 2 O 2 Se nanowire (2D/1D) NIR photodetector with a high rectification ratio of 10 3 , within the wavelength range of 405–808 nm . However, due to the complicated interfaces, the complex manufacturing process, and the enhanced Auger scattering processes, − the devices based on 2D/3D, 2D/2D, and 2D/1D heterostructure still face performance limitation and a low yield of fabrication, which severely hinders their further application in the field of high-performance optoelectronics.…”

Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

“…In recent years, the utilization of organic–inorganic halide lead perovskite (HOIP) materials, particularly methylammonium lead halide (MAPbX 3 , X = Cl, Br, or I), has gained momentum in multiple optoelectronic fields due to their affordability, straightforward synthesis, and excellent performance. , Notably, low-dimensional nanostructures, such as 1D nanowires and 2D nanoplates, exhibit lower trap density, longer carrier lifetime, and reduced recombination rates compared to their bulk counterparts. These advantages arise from their crystal structure and directional transport, while the quantum size effect enables ultrahigh gain and photoresponse performance. ,− Therefore, 1D perovskite micro/nanowires hold promise for the fabrication of highly sensitive photodetectors, meanwhile this strategy can offer insights into their physical mechanisms due to their simplified structure. − …”