Perovskite/Black Phosphorus/MoS₂ Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response

Abstract

As compared with epitaxial semiconductor devices, two-dimensional (2D) heterostructures offer alternative facile platforms for many optoelectronic devices. Among them, photovoltaic based photodetectors can give fast response, while the photogate devices can lead to high responsivity. Here, we report a 2D photogate photodiode, which combines the benefits of 2D black phosphorus/MoS2 photodiodes with the emerging potential of perovskite, to achieve both fast response and high responsivity. This device architecture is constructed based on the fast photovoltaic operation together with the high-gain photogating effect. Under reverse bias condition, the device exhibits high responsivity (11 A/W), impressive detectivity (1.3 × 1012 Jones), fast response (150/240 μs), and low dark current (3 × 10–11 A). All these results are already much better in nearly all aspects of performance than the previously reported 2D photodiodes operating in reverse bias, achieving the optimal balance between all figure-of-merits. Importantly, with a zero bias, the device can also yield high detectivity (3 × 1011 Jones), ultrahigh light on/off ratio (3 × 107), and extremely high external quantum efficiency (80%). This device architecture thus has a promise for high-efficiency photodetection and photovoltaic energy conversion.

High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb2O3/Monolayer MoS2 Crystals Grown via Chemical Vapor Deposition

“…It was exponentially decreased upon increasing P , and a remarkably high responsivity of 1.1 × 10 4 , 5.3 × 10 4 , 4.5 × 10 4 , 3 × 10 4 , 2.8, and 7.8 A W −1 was achieved for the excitations of 360, 457, 532, 671, 914, and 1064 nm, respectively. These values are superior to the pure, [ 47–48 ] and among the top level of photodetectors based on sensitized monolayer MoS 2 [ 49 ] and other 2D materials, [ 50 ] and also being great advantage over the photodetector (see Table S1, Supporting Information for more comparison). The high responsivity and wide spectral range observed for FET‐21% phototransistor are attributed to the efficient charge transfer at the interface of Sb 2 O 3 /MoS 2 and the infinite absorbance from ultraviolet to the infrared regime (Figure 1e).…”

Perovskite‐Based Phototransistors and Hybrid Photodetectors

“…Generally, there are three ways to characterize it. i) The time intervals (rise time and fall/decay time) between photocurrent level reaching 10% and 90% (0 to 80% sometimes) of its saturation level upon on/off illumination cycles; ii) the light modulation frequency at which the photocurrent drops to −3 dB from its stabilized level; iii) the time constants extracted from the double‐exponential function fitting curves of the temporal response …”

Review on Recent Progress of All‐Inorganic Metal Halide Perovskites and Solar Cells

“…The excellent light absorption capability, relatively long diffusion length of charge carriers and tunable bandgap ( E g ) have been flourishing metal‐halide perovskite materials in the last several years in both research and industrial community. Applications of perovskites include photovoltaics, light‐emitting diodes, photodetectors, solar fuels, etc. Since the first attempt to use lead‐halide perovskite as light absorber for solar cells by Miyasaka in 2009 with an efficiency of 3.8% using I − /I 3 − as redox mediator, the inorganic–organic hybrid perovskite‐based solar cells (PSCs) have reached a certified power conversion efficiency (PCE) of 24.2% in 2019, which is comparable with that of copper indium–gallium diselenide (CIGS) and silicon‐based solar cells.…”