Accurate atomic coordinates of the room-temperature ( √ 3× √ 3)R30 • and low-temperature (3×3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4-sites in the ( √ 3 × √ 3)R30 • structure. In the low temperature phase one of the three Sn atoms per (3×3) unit cell is displaced outwards by 0.26±0.04 Å relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.