Performances presented by zinc oxide thin films deposited by spray pyrolysis

Nunes, Patrı́cia; Fernandes, Beatriz Ferreira; Fortunato, Elvira; Vilarinho, Paula M.; Martins, Rodrigo

doi:10.1016/s0040-6090(98)01394-7

Cited by 178 publications

(60 citation statements)

References 12 publications

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“…Another possibility can be ascribed to a decrease in mobility of carriers caused by segregation of excess Sb dopants at the interstitial sites or grain boundary [12,13]. EDS analysis revealed that the concentration of Sb in the film annealed at 400 1C was 1.6 at% and increased to 2.1 at% with increasing the annealing temperature up to 800 1C.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Wang

Chen

Yin

et al. 2006

Journal of Crystal Growth

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Sb-doped and undoped ZnO thin films were deposited on Si (1 0 0) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (r$1-10 O cm). Annealing in a nitrogen ambient at 400 1C for 1 h made both samples highly resistive (r410 3 O cm). Increasing the annealing temperature up to 800 1C, the resistivity of the undoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 1C became semi-insulating with a resistivity of 10 4 O cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. r

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Section: Resultsmentioning

confidence: 99%

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Wang

Chen

Yin

et al. 2006

Journal of Crystal Growth

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“…Many studies have recently focused on ZnO materials because of their potential application in solar cells, gas sensors, piezoelectric transducers and varistors [2][3][4][5]. Early studies verified that some dopants, such as Al, In and Ga, can improve the electrical and optical properties of ZnO films [6][7][8]. Recently, widening in the band gap of ZnO produced by Ti-, Ca-, Si, Sc, and Mo-dopants has also been reported [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Sm-doping effect on optical and electrical properties of ZnO films

Fei

2015

J Nanostruct Chem

134

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A series of ZnO: Sm films with Sm content of 0-1.0 at.% were deposited by a chemical solution deposition. The deposited films were characterized by X-ray diffraction, field emission scanning electron microscopy, UVVis and luminescent spectrophotometry, and electrical resistance measurement. The experiments revealed that the Sm doping first increased and then decreased the optical transmittance, band gap, and n-type conductivity with increasing Sm content. The film with the Sm content of 0.75 at.% showed optimal optical and electrical properties. The maximal band gap widening was about 0.19 eV. The resistance decrease of *20 times was observed. The photoluminescence measurement indicated that the films showed a strong near band gap emission and a blue-green emission related to intrinsic defect. The refractive index, extinction coefficient, and dielectric constant of the films were calculated with the transmittance and reflectance spectra.

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“…This improvement can be associated with a higher carrier injection through the Al-ZnO (metal-semiconductor) interface. Nunes et al [6,18,19] reported that this is due to desorption of oxygen present at the grain boundaries. As result of this oxygen loss, there is an increase in the effective carrier concentration near to the Al-ZnO interface.…”

Section: Thermal Annealing Effectsmentioning

confidence: 99%

“…However, these deposition techniques present technical limitations such as low compatibility with large-area substrates, high cost and need of high or ultra-high vacuum. On the other hand, solution process techniques offer a solution to these problems at low cost and the possibility to deposit films under air ambient [5,6]. The conventional solution-processed thin films by spin-coating have a low density due to pores during the annealing of the films [7].…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

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Performances presented by zinc oxide thin films deposited by spray pyrolysis

Cited by 178 publications

References 12 publications

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Sm-doping effect on optical and electrical properties of ZnO films

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

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