Performance study of high-k gate &amp;amp; spacer dielectric Dopant Segregated Schottky Barrier SOI MOSFET

Kale, Sumit; Kondekar, P. N.

doi:10.1109/ecs.2015.7124762

Cited by 4 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using a high‐K for an orderly pile gate decreases the leakage current, enabling the transistors to scale down 20,21 . The low energy barrier created by SiO 2 can be also fastened by using the HfO 2, subsequently in higher drain currents 22 …”

Section: Introductionmentioning

confidence: 99%

“…20,21 The low energy barrier created by SiO 2 can be also fastened by using the HfO 2, subsequently in higher drain currents. 22 The high axial scaling bulges the issue of highly accelerated and energetic hot carriers. The electric field augmented these hot carriers in the channel to achieve sufficient energy to damage the Si-SiO 2 interface, degrading device performance.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

View full text Add to dashboard Cite

This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%