Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

Fan, Linjie; Bi, Jinshun; Xi, Kai; Majumdar, Sandip; Li, Bo

doi:10.3390/s20102751

Cited by 5 publications

(4 citation statements)

References 22 publications

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“…This appendix briefly summarizes the previous work of [8] and focuses on the selection of the optimal sensor structure. Compared with the bulk structure, the characteristics of the FD-SOI Hall sensors (such as sensitivity and efficiency) are improved because of its thin thickness and low doping concentration.…”

Section: Discussionmentioning

confidence: 99%

“…Compared to the conventional bulk Si CMOS (complementary metal-oxide-semiconductor) for Hall sensor manufacturing, the choice of fully-depleted silicon-on-insulator (FD-SOI) technology brings several important advantages. The FD-SOI structure not only has the advantages of less noise generation, lower biasing voltage, and higher integration density [5][6][7], but it has also been confirmed that-compared with the bulk structure-the characteristics of the sensors (such as sensitivity and efficiency) are improved because of its thin thickness and low doping concentration [8].…”

Section: Introductionmentioning

confidence: 90%

“…The optimal FD-SOI Hall sensor structure has been demonstrated in the authors' previous work [8]. There is a brief summary in Appendix A.…”

Section: Device For Simulationmentioning

confidence: 99%

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Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 90%

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Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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“…Figure 2 presents a schematic illustration of the sensor proposed in the present study consisting of a 4-inch silicon wafer, a silicon dioxide insulating layer, metal leads, and a cross-shaped phosphide-doped detection zone [ 25 , 26 , 27 ] For comparison purposes, four devices are fabricated, in which the cross-shaped detection zones have the same aspect ratio (L/W = 2.625), but different sizes, namely S, M, L, and XL. In the proposed devices, the analog signals are amplified by a large-current operational amplifier (AD620) and then supplied to an analog-to-digital converter (MEGA2560).…”

Section: Principle and Designmentioning

confidence: 99%

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

et al. 2021

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A magnetic field measurement system based on an array of Hall sensors is proposed. The sensors are fabricated using conventional microelectromechanical systems (MEMS) techniques and consist of a P-type silicon substrate, a silicon dioxide isolation layer, a phosphide-doped cross-shaped detection zone, and gold signal leads. When placed within a magnetic field, the interaction between the local magnetic field produced by the working current and the external magnetic field generates a measurable Hall voltage from which the strength of the external magnetic field is then derived. Four Hall sensors are fabricated incorporating cross-shaped detection zones with an identical aspect ratio (2.625) but different sizes (S, M, L, and XL). For a given working current, the sensitivities and response times of the four devices are found to be almost the same. However, the offset voltage increases with the increasing size of the detection zone. A 3 × 3 array of sensors is assembled into a 3D-printed frame and used to determine the magnetic field distributions of a single magnet and a group of three magnets, respectively. The results show that the constructed 2D magnetic field contour maps accurately reproduce both the locations of the individual magnets and the distributions of the magnetic fields around them.

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Size effect in CoFeB-based anomalous Hall sensor and its applications in pulse detection

Gu,

2024

Journal of Applied Physics

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Anomalous Hall effect (AHE) sensor has attracted significant attention in recent years due to its simpler structure and better sensitivity as compared to semiconductor-based Hall sensors. However, up to now, most of the work has been focused on its basic functionalities, with very little attention given to optimizing its performance for practical applications. In this work, we systematically investigated how the lateral dimension affects the performance of CoFeB-based AHE sensors. By adjusting the sensor width while keeping the length and other parameters constant, it is found that although the output signal amplitude decreases with increasing the sensor width, the noise and power consumption also decrease simultaneously, leading to an overall enhancement of the sensor performances with a sensitivity, detectivity, and power efficiency of 8960 Ω/T, 205nT/Hz@1Hz, and 2009 V/WT, respectively. To illustrate the potential applications of AHE sensors, we demonstrate a proof-of-concept experiment to showcase the potential AHE sensor in pulse detection.

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Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

Cited by 5 publications

References 22 publications

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

Size effect in CoFeB-based anomalous Hall sensor and its applications in pulse detection

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