Performance optimization of CH3NH3Pb(I1-xBrx)3 based perovskite solar cells by comparing different ETL materials through conduction band offset engineering

Ahmed, Ayyaz; Riaz, Kashif; Mehmood, Haris; Tauqeer, Tauseef; Ahmad, Zubair

doi:10.1016/j.optmat.2020.109897

Cited by 94 publications

(53 citation statements)

References 45 publications

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“…As a result, a large built‐in electric potential is developed between the HTL and the absorber interface at the high acceptor density. [ 43,52,76 ]…”

Section: Resultsmentioning

confidence: 99%

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

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“…As a result, a large built‐in electric potential is developed between the HTL and the absorber interface at the high acceptor density. [ 43,52,76 ]…”

Section: Resultsmentioning

confidence: 99%

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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“…The PCE is sufficient at low temperature, which is determined to be 31.74% at a temperature of 273 K, while it reduces to 20.70% at 473 K. The degradation nature in efficiency at high temperatures observed herein is in good agreement with the temperature‐dependent PV outputs discussed in previous reports. [ 32,33,50,71 ]…”

Section: Resultsmentioning

confidence: 99%

“…[ 22 ] Moreover, it has been stated that incorporation of highly doped HTLs at the back side of heterojunction TFSCs improves the carrier collection probability through proper band alignment by decreasing rear surface recombination. [ 31–34 ] This creates an built‐in potential at absorber(p)/HTL(p + ) junction, which causes ease of transportation of holes to the back contact through the HTL, as well as minority carrier reflection from rear surface to front electrode. The conduction band offset (CBO) and valance band offset (VBO) at both at buffer/absorber and absorber/HTL interfaces, respectively, play a crucial role in studying interface recombination for determining high‐performance solar cells.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Sultana

Islam

Ahmed

2021

Physica Status Solidi (a)

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Herein, the widely available and cheapest cuprous oxide (Cu2O) as hole transport layer (HTL) is proposed to improve the performance of thin‐film copper indium gallium selenide (CIGS) solar cell. Solar Cell Capacitance Simulator in One Dimension (SCAPS‐1D) is utilized to design and study output characteristics of the modeled photovoltaic (PV) cell. A comparison between the proposed cell with Cu2O HTL and the reference CIGS solar cell is presented. The PV performances of CIGS solar cells are analyzed by changing thickness, carrier density and defects of different layers, operating temperatures, and recombination velocity at back contact. Optimal thicknesses of Cu2O HTL, CIGS absorber, cadmium sulfide (CdS) buffer, and the fluorine‐doped tin oxide (FTO) window layer are obtained to be 0.3, 0.8, 0.05, and 0.05 μm, respectively. Efficiency of 30.30% is achieved for the proposed CIGS PV device with Cu2O HTL. The simulated results imply that the proposed Cu2O as HTL can be used to show proficient and cost‐effective thin‐film CIGS PV cells.

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“…[ 48,49 ] This program requires significant number of semiconductor parameters and optical parameters [ 46 ] such as conduction band effective density of states ( N c ), valence band effective density of states ( N v ), bandgap ( E g ), electron affinity ( χ ), dielectric permittivity ( ϵ r ), electron mobility ( μ e ), hole mobility ( μ h ), donor density ( P d ), acceptor density ( P a ), radiative recombination coefficient ( R a ), defect density ( N t ), and absorption coefficient ( α ). [ 49–51 ]…”

Section: Device Structure and Simulation Parametermentioning

confidence: 99%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

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Performance optimization of CH3NH3Pb(I1-xBrx)3 based perovskite solar cells by comparing different ETL materials through conduction band offset engineering

Cited by 94 publications

References 45 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

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Performance optimization of CH3NH3Pb(I1-xBrx)3 based perovskite solar cells by comparing different ETL materials through conduction band offset engineering

Cited by 94 publications

References 45 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

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Product

Resources

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Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension