Performance of the SRRC scanning photoelectron microscope

Hong, I.-H.; Lee, T.-H.; Yin, Gung‐Chian; Wei, Der-Hsin; Juang, Jwei-Ming; Dann, T. E.; Klauser, Ruth; Chuang, T. J.; Chen, C.T.; Tsang, K. L.

doi:10.1016/s0168-9002(01)00516-2

Cited by 47 publications

(18 citation statements)

References 6 publications

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“…XPS measurements were performed using a scanning photoemission microscope (SPEM) at beamline 09A1 of the Taiwan Light Source 21 22 23 . The photon energy was 380 eV, and the beam was focused using a Fresnel zone plate to a width of ~200 nm.…”

Section: Methodsmentioning

confidence: 99%

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

et al. 2014

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Surfaces of semiconductors with strong spin-orbit coupling are of great interest for use in spintronic devices exploiting the Rashba effect. BiTeI features large Rashba-type spin splitting in both valence and conduction bands. Either can be shifted towards the Fermi level by surface band bending induced by the two possible polar terminations, making Rashba spin-split electron or hole bands electronically accessible. Here we demonstrate the first real-space microscopic identification of each termination with a multi-technique experimental approach. Using spatially resolved tunnelling spectroscopy across the lateral boundary between the two terminations, a previously speculated on p-n junction-like discontinuity in electronic structure at the lateral boundary is confirmed experimentally. These findings realize an important step towards the exploitation of the unique behaviour of the Rashba semiconductor BiTeI for new device concepts in spintronics.

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Section: Methodsmentioning

confidence: 99%

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

et al. 2014

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“…The PES and APXPS experiments were performed at the TLS BL09A2 and 24A beamlines, respectively, at National Synchrotron Radiation Research Center in Taiwan. 59,60 For the former, the beam (a fixed energy 383 eV) was incident normal to the surface and photoelectrons were collected at angle 58° from the surface normal; for the latter, the beam (a fixed energy 380 eV) was incident 56° from the surface normal and the analyzer (SPECS NAP 150), coupled with 4-stages differential pumping, was placed normal to the surface. The energy resolution was estimated to be near 0.1 eV and the binding energy (BE) is referred to the substrate bulk Al 2p core-level at 72.9 eV.…”

Section: Experimental Methodsmentioning

confidence: 99%

Promoted activity of annealed Rh nanoclusters on thin films of Al₂O₃/NiAl(100) in the dehydrogenation of Methanol-d₄

Hung

Liao

et al. 2021

RSC Adv.

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“…TPD spectra were taken with a quadruple mass spectrometer (Hiden) to monitor various masses and by ramping the sample at a rate of 3 K/s; the spectrometer was shielded and placed near the sample (about 2 mm). We performed our PES experiments with the BL 09A2 spectroscopy beamline at National Synchrotron Radiation Research Center in Taiwan [61]. The beam, with a photon energy at 383 eV, was incident normal to the surface, whereas photoelectrons were collected at an angle 58 • off from the surface normal.…”

Section: Methodsmentioning

confidence: 99%

Investigation of Thermal Stability and Reactivity of Rh Nanoclusters on an Ultrathin Alumina Film

et al. 2019

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We studied the structural and morphological evolution of Rh clusters on an ordered ultrathin alumina film grown on NiAl(100) in annealing processes, under ultrahigh vacuum conditions and with various surface probe techniques. The Rh clusters, prepared on vapor deposition of Rh onto the alumina film at 300 K, had an fcc phase and grew in the (100) orientation; the annealing altered the cluster structure little—the lattice parameter decreased by a factor <2%—but the cluster morphology significantly. With elevated temperature, small clusters (diameter ≤1.5 nm) decreased little in size; in contrast, large clusters (diameter ≥2.0 nm) varied in a complex manner—their mean diameter decreased to about 1.5 nm on annealing to 450 K, despite their similar height, while it increased to above 2.0 nm at temperature ≥570 K. This atypical decrease in size was governed predominantly by energetics. Such a reduced size enhanced the total surface area as well as the reactivity of the clusters toward methanol decomposition, so increased the production of D2 (H2) and CO from decomposed methanol-d4 (or methanol). The result implies a higher temperature tolerance for Rh clusters on the alumina film and a practical approach to prepare small Rh clusters with high reactivity.

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Performance of the SRRC scanning photoelectron microscope

Cited by 47 publications

References 6 publications

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Promoted activity of annealed Rh nanoclusters on thin films of Al₂O₃/NiAl(100) in the dehydrogenation of Methanol-d₄

Investigation of Thermal Stability and Reactivity of Rh Nanoclusters on an Ultrathin Alumina Film

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Performance of the SRRC scanning photoelectron microscope

Cited by 47 publications

References 6 publications

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Promoted activity of annealed Rh nanoclusters on thin films of Al2O3/NiAl(100) in the dehydrogenation of Methanol-d4

Investigation of Thermal Stability and Reactivity of Rh Nanoclusters on an Ultrathin Alumina Film

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Promoted activity of annealed Rh nanoclusters on thin films of Al₂O₃/NiAl(100) in the dehydrogenation of Methanol-d₄