Performance of RF sputtered p -Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

Singh, Satyendra Kumar; Hazra, Purnima

doi:10.1016/j.apsusc.2016.12.181

Cited by 13 publications

(6 citation statements)

References 14 publications

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“…The interface between these two materials plays an important role in the device performance: the heterogeneity at the interface will cause the effective barrier height to fluctuate with the reduced performance of a device. This phenomenon is more evident in harsh environments such as high temperature and high flux [ 57 , 58 , 59 ].…”

Section: Heterojunctions With 1d Metal Oxides Semiconductorsmentioning

confidence: 99%

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

et al. 2020

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This review is mainly focused on the optoelectronic properties of diamond-based one-dimensional-metal-oxide heterojunction. First, we briefly introduce the research progress on one-dimensional (1D)-metal-oxide heterojunctions and the features of the p-type boron-doped diamond (BDD) film; then, we discuss the use of three oxide types (ZnO, TiO2 and WO3) in diamond-based-1D-metal-oxide heterojunctions, including fabrication, epitaxial growth, photocatalytic properties, electrical transport behavior and negative differential resistance behavior, especially at higher temperatures. Finally, we discuss the challenges and future trends in this research area. The discussed results of about 10 years’ research on high-performance diamond-based heterojunctions will contribute to the further development of photoelectric nano-devices for high-temperature and high-power applications.

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Section: Heterojunctions With 1d Metal Oxides Semiconductorsmentioning

confidence: 99%

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

et al. 2020

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“…Zinc oxide, a well-known direct bandgap II-VI semiconductor, is a material with large exciton binding energy (60 meV) and a wide bandgap (E g~3 .37 eV) [1], suitable for short wavelength optoelectronic applications [2]. It is a promising material for fabricating photonic [2,3], optical [4][5][6], electronic [7,8] and photovoltaic devices [9,10]. Additionally, ZnO is transparent to visible light and can be made highly conductive by doping [11,12].…”

Section: Introductionmentioning

confidence: 99%

Grown and Characterization of ZnO Aligned Nanorod Arrays for Sensor Applications

et al. 2021

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ZnO nanorods are promising materials for many applications, in particular for UV detectors. In the present paper, the properties of high crystal quality individual ZnO nanorods and nanorod arrays grown by the self-catalytic CVD method have been investigated to assess their possible applicationsfor UV photodetectors. X-ray diffraction, Raman spectroscopy and cathodoluminescence investigations demonstrate the high quality of nanorods. The nanorod resistivity and carrier concentration in dark is estimated. The transient photocurrent response of both as grown and annealed at 550 °C nanorod array under UV illumination pulses is studied. It is shown that annealing increases the sensitivity and decreases the responsivity that is explained by oxygen out-diffusion and the formation of near surface layer enriched with oxygen vacancies. Oxygen vacancy formation due to annealing is confirmed by an increase of green emission band intensity.

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“…Recently, the fabrication and applications of ZnO nanomaterials based electronic devices, especially the heterojunction diodes based on n-ZnO/p-Si substrate, have attracted tremendous interest due to compatibility of Si substrate to the current generation CMOS technology [24][25][26][27][28]. The properties of the fabricated heterojunction diodes were evaluated at various temperatures [24][25][26][27][28]. Aksoy et al have fabricated n-ZnO/ p-Si heterojunction diode and examined the effect of ambient temperature on the electrical properties of the device [24].…”

Section: Introductionmentioning

confidence: 99%

“…The effect of oxygen plasma treatment on the electrical properties of fabricated n-ZnO/p-Si heterojunction diode was examined by Kim et al [26] Ozmen et al examined the electrical properties, under dark and light conditions, of heterojunction diode fabricated based on spray derived n-ZnO nanostructured/p-Si substrate assembly [27]. Singh et al have examined the high temperature electrical performance of fabricated p-Si/n-ZnO nanoparticle based heterojunction diode and reported in the literature [28]. To enhance the properties and for specific applications, recently, vaious doped ZnO nanomaterials were used to fabricate heterojunction diodes.…”

Section: Introductionmentioning

confidence: 99%

Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

Al‒Hadeethi¹,

Badran²,

Umar³

et al. 2020

mat express

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In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K-295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 A, to 0.87 A to 0.84 A when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 A-3.36 A and to 9.95 A when temperature increases from 200 K-250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2-5 V.

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Performance of RF sputtered p -Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

Cited by 13 publications

References 14 publications

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

Grown and Characterization of ZnO Aligned Nanorod Arrays for Sensor Applications

Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

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