The applicability of using Electron Beam Induced Current (EBIC) measurements on Schottky barriers to obtain the mean electron–hole pair creation energy in β-Ga2O3 is reported. It is shown that, when combined with Monte Carlo simulation, this approach yields for Si, GaN, and 4H–SiC a data set consistent with empirical expressions proposed earlier in the literature for many different semiconductors. The method is then applied to β-Ga2O3, where complications related to hole trapping in the material give rise to a strong gain in EBIC and have to be carefully treated and taken into account. When this is done, the mean electron–hole pair energy formation is found to be 15.6 eV, in reasonable agreement with the values predicted by empirical expressions.
In this work the crystal structure by single crystal X‐ray measurement and optical properties of 1D propane‐1,2‐diammonium pentachlorobismuthate [NH3CH2CH(NH3)CH3]BiCl5 organic–inorganic hybrid perovskite are presented. It is prepared by mixing ethanolic solution of equimolar ratios (1:1) of its basic components. The title compound crystallized in the noncentrosymmetric orthorhombic space group Pca21 with Z = 8 molecules per unit cell. The unit‐cell parameters are a = 19.8403 (7) Å, b = 6.3303 (2) Å, c = 19.0314 (7) Å. The vibrational spectra are studied by Raman and infrared spectroscopy. The optical properties show a strong absorption in the ultraviolet region, the band gap energy Eg is found to be 3.15 eV. Cathodoluminescence measurements are also discussed.
In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensional hole layers in the Ga2O3 was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-Ga2O3 and AlN. Structural studies indicated that in the thickest κ-Ga2O3/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed. For thick (23 μm and 86 μm) κ-Ga2O3 films grown on GaN/sapphire, the good rectifying characteristics of Ni Schottky diodes were observed. In addition, deep trap spectra and electron beam-induced current measurements were performed for the first time in this polytype. These experiments show that the uppermost 2 µm layer of the grown films contains a high density of rather deep electron traps near Ec − 0.3 eV and Ec − 0.7 eV, whose presence results in the relatively high series resistance of the structures. The diffusion length of the excess charge carriers was measured for the first time in κ-Ga2O3. The film with the greatest thickness of 86 μm was irradiated with protons and the carrier removal rate was about 10 cm−1, which is considerably lower than that for β-Ga2O3.
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