1983
DOI: 10.1016/0250-6874(83)85072-0
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Performance of gas-sensitive Pd-gate mosfets with SiO2 and Si3N4 gate insulators

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Cited by 33 publications
(2 citation statements)
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“…The design of the present device (31) may be viewed as a logical progression from the Pd MOSFET discussed above, although its mode of operation is substantially different. It is an advance over the porous Pd gate (8,32), the cantilevered gate (33), and the Pd MOSFET with deliberately etched holes (34)(35)(36). Conducting polymers such as polypyrrole, which has been found to be sensitive to NH3 (37), have been electrochemically deposited on the suspended gate (16,17).…”
mentioning
confidence: 99%
“…The design of the present device (31) may be viewed as a logical progression from the Pd MOSFET discussed above, although its mode of operation is substantially different. It is an advance over the porous Pd gate (8,32), the cantilevered gate (33), and the Pd MOSFET with deliberately etched holes (34)(35)(36). Conducting polymers such as polypyrrole, which has been found to be sensitive to NH3 (37), have been electrochemically deposited on the suspended gate (16,17).…”
mentioning
confidence: 99%
“…Οι αισθητήρες ChemFET κατασκευάζονται αντικαθιστώντας το πυρίτιο (Si) ή το αλουμίνιο (Al) της πύλης ενός τρανζίστορ με καταλύτες όπως το παλλάδιο (Pd) και τον λευκόχρυσο (Pt). Η πρώτη αναφορά αισθητήρα τύπου MOSFET με υλικό πύλης το παλλάδιο παρουσιάστηκε από τον Lundstrom και προοριζόταν για την ανίχνευση H2 86 , ακολούθησαν μελέτες οι οποίες είτε χρησιμοποιούσαν διαφορετικά υλικά 87,88 είτε στόχευαν στην ανίχνευση διαφορετικών αερίων, όπως για παράδειγμα το CO 89 . Παραλλαγές αυτού του τύπου αισθητήρων όπως παρουσιάζονται και στο παραπάνω σχήμα αποτελούν τα ISFET (Ion Selective FET) και τα OGFET (Open Gate FET).…”
Section: ποτενσιομετρικοί αισθητήρεςunclassified