Field Effect Chemical Sensors

Lundström, Ingemar; Berg, Albert van den; Schoot, B. H. van der; Vlekkert, Hendrik H. van den; Armgarth, M.; Nylander, C.

doi:10.1002/9783527619269.ch10a

Cited by 4 publications

(7 citation statements)

References 166 publications

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“…This process is followed by the rate-determining step, which is a one-electron reduction of oxygen in the presence of water (2). The mobility of OH − on fluoride sites in the LaF 3 lattice (3) stabilizes the OH − produced in reaction (2). The Nernst equation describes the sensitivity of the sensor.…”

Section: Introductionmentioning

confidence: 99%

“…The fundamentals of these devices and the mechanism of hydrogen detection at the Pd/oxide interface are summarized in [2]. For this sensor type, the dissociation of hydrogen molecules at the Pd gate electrode, diffusion of the atoms, and formation of a dipole layer at the metal/oxide interface lead to a change of the threshold voltage in field-effect transistors, the flatband voltage in MIS capacitors, or the photo current in the sensors, which is based on the photo effect in the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

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Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

et al. 2006

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An LaF 3 layer was shown to improve the characteristics of field-effect gas sensors for room-temperature hydrogen monitoring. The Pt/LaF 3 interface leads to a Nernst-type response and a detection limit of 10-ppm hydrogen in atmospheric air. The response time was shown to be about 110 s and was independent of hydrogen concentration. A method for the stabilization of a long-term behavior of the sensor was successfully demonstrated. The mechanism of the sensor's response to hydrogen was shown to be different from that of the metal/insulator/semiconductor (MIS)-type sensors.Index Terms-Hydrogen sensor, metal/insulator/semiconductor (MIS) structure, room-temperature measurement, solid electrolyte.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

et al. 2006

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“…The principle of a FET (28) is shown in Figure 4. It normally consists of a p-type semiconductor with two n-doped regions near to each other, the source and the drain that are contacted by the respective electrodes.…”

Section: Field-effect Devicesmentioning

confidence: 99%

“…Lundström et al (28) gave an introduction to sensing via field-effect devices and described a wide variety of (laboratory) applications. Some examples of ionselective sensors (mostly pH) are given there and are not discussed further in this article.…”

Section: Field-effect Devicesmentioning

confidence: 99%

Solid‐state Sensors for Field Measurements of Gases and Vapors

Mujahid

Lieberzeit

Dickert

2000

Encyclopedia of Analytical Chemistry

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Remote and infield analysis is developing into a crucial aspect of modern analytical chemistry. Chemical sensors, which are small measuring devices consisting of a recognition layer, a transducer, and the measurement electronics, have proven to be highly suitable tools for this purpose. Although usually they are constructed for the detection of very limited amounts of chemical compounds and often do not reach the detection limits of modern analytical instruments, they show very desirable advantages: the systems are easy to operate, mostly rugged, small, of good value, and can be manufactured by established technological methods. Owing to their size and ruggedness, they can even be operated in harsh environments and often can be constructed to be suitable for remote measurements, where several sensors are interrogated by a central analytical site. Devices being used include optical fibers, field‐effect transistors (FETs), electrochemical cells (be they potentiometric or amperometric), and mass‐sensitive components of all kinds. The chemically sensitive coatings range from bare transducer surfaces to dyes reacting with analyte or sterically specific binding sites (e.g. host–guest complexes). A seeming drawback is the fact that only few sensors react specifically toward one defined component but normally show a sensitivity pattern toward chemically related substances. By using an array of several components followed by modern methods of data evaluation (such as neural networks), a group of analytes can be detected and characterized simultaneously. This article introduces device and recognition layer principles as well as covering field sensors published during the last one and a half decades based on all the different kinds of transducers and sensor layers. Some of the devices (such as the lambda probe) are already marketed, others are developed to a stage where field measurements have already been carried out, but which are not market‐ready.

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“…After that, the gate sensitive MOS field-effect transistor, metal-insulator-semiconductor (MIS) capacitor, and Schottky diode types of electronic devices have been widely studied for hydrogen sensor application. In these research works, different semiconductors such as GaAs, silicone carbide (SiC), diamond, and sapphire with rutile (TiO 2 ) have replaced the commonly used silicon (Si) [2].…”

Section: Introductionmentioning

confidence: 99%

Investigation of influence of hydrogen gas on Pd/BST/Pt device by impedance spectroscopy

Deng

Tan

Zhu

et al. 2004

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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A new application using barium strontium titanate (BST) thin films to fabricate the Pd/BST/Pt heterostructure for hydrogen gas detection has been investigated. To further understand the mechanism of this novel hydrogen sensing properties, impedance spectroscopy of the Pd/BST/Pt has been systematically studied and interpreted satisfactorily based on an equivalent circuit model. The alternate current (AC) electrical data of the extracted parameters and the properties of dielectric permittivity are discussed. The influence of hydrogen on the impedance spectra demonstrates that the charges induced by hydrogen ions mainly occur at the interface rather than in the bulk of the film. These experimental results provide clear evidence for the hydrogen sensing mechanism in the Pd/BST/Pt capacitive device.

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Field Effect Chemical Sensors

Cited by 4 publications

References 166 publications

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Room-Temperature Hydrogen Sensitivity of a MIS-Structure Based on the$hboxPt/LaF_3$Interface

Solid‐state Sensors for Field Measurements of Gases and Vapors

Investigation of influence of hydrogen gas on Pd/BST/Pt device by impedance spectroscopy

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