Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

Hasnain, G.; Tai, K.; Yang, Ligang; Wang, Y.H.; Fischer, R.; Wynn, J. D.; Weir, B. E.; Dutta, Niloy K.; Cho, A.Y.

doi:10.1109/3.89954

Cited by 185 publications

(69 citation statements)

References 17 publications

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“…We interpret the different modal evolution under modulation with zero versus nonzero bias as a manifestation of thermal lensing [7]. Prebiased modulation (Fig.…”

Section: Resultsmentioning

confidence: 99%

Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

Young

Choquette

Chuang

et al. 2001

IEEE Photon. Technol. Lett.

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Abstract-Using a hybrid ion implanted/selectively oxidized device structure, we report high-power single-mode operation of an 850-nm vertical-cavity laser. Under continuous-wave operation, 4 mW of single-mode power with 45 dB of side-mode suppression is achieved. The spectral behavior under pulsed modulation is determined to be influenced by thermal lensing. When biased to threshold, single-mode operation with 35-dB side-mode suppression is obtained for large signal modulation.

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“…We interpret the different modal evolution under modulation with zero versus nonzero bias as a manifestation of thermal lensing [7]. Prebiased modulation (Fig.…”

Section: Resultsmentioning

confidence: 99%

Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

Young

Choquette

Chuang

et al. 2001

IEEE Photon. Technol. Lett.

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“…It is important to notice that for short excitation pulses, with durations of the order of the carrier lifetimes, the pulsed threshold currents are affected by the turn-on delay and therefore are larger than for dc operation. Also, in the excitation conditions used in our experiments ͑duty cycles ϳ10%͒, the intensity rolloff at high currents characteristic of VCSELs in dc operation 5 was not observed since the temperature increase is less significant. For excitation pulses a͒ Electronic mail: osvaldo@lamar.colostate.edu with amplitudes below 15 times I th ͓Fig.…”

Section: ͓S0003-6951͑96͒04505-0͔mentioning

confidence: 99%

Transverse mode dynamics in vertical cavity surface emitting lasers excited by fast electrical pulses

Buccafusca

Chilla

Rocca

et al. 1996

Applied Physics Letters

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We report measurements of the transient multimode dynamics of vertical cavity surface emitting lasers excited by short ͑100-200 ps rise times, 1 ns duration͒ electrical pulses. Fast changes on the spatial distribution of the output power and strong mode competition are observed. Numerical simulations show that the observed dynamics are due to the partial overlap of the different transverse modes through spatial hole burning. © 1996 American Institute of Physics. ͓S0003-6951͑96͒04505-0͔Recent advances in semiconductor device technology has produced two-dimensional arrays of vertical cavity surface emitting lasers ͑VCSELs͒, that, with modulation bandwidths of the order of 10-15 GHz, 1 are suitable for optical data links and optical signal processing. However, when semiconductor lasers are modulated at gigahertz frequencies, transient effects can affect their performance. In particular, the presence of higher order modes in the cavity can cause rapid variations of the spectral, spatial, and noise characteristics of the laser beam. Recent theoretical calculations 2 predicted the importance of spatial hole burning effects in the dynamic evolution of transverse modes in VCSELs but, to our knowledge, no experimental studies on the subject have been reported. In this letter, we present spectrally and temporally resolved measurements of VCSELs under fast electrical excitation, which confirm the importance of mode competition and spatial hole burning in the dynamics in VCSELs, which are essentially different from the thoroughly studied dynamics in edge emitters. The transient response of edge emitters is the result of several longitudinal modes competing from the onset of laser operation.3 In contrast, the transient response measurements in VCSELs discussed here, show that the onset of a higher order spatial mode occurs after a delay dependent on prebias and pumping conditions. The presence of this higher order transverse mode is observed to produce a significant drop in the power of the TEM 00 mode due to the redistribution of the available gain between the modes.The lasers used in the measurements were gain guided GaAs/AlGaAs multiple quantum well VCSELs, with top and bottom mirrors consisting of step graded AlAs/AlGaAs distributed Bragg reflectors with 23 and 32 periods, respectively. 4 The active region diameter was chosen to be 8m to limit the number of transverse modes oscillating in the cavity. The VCSELs were prebiased through a bias tee and then electrically pumped using a fast pulse generator capable of providing square pulses of 0.8 -1 ns duration with 100-200 ps rise and fall times. Both the prebias and the peak currents were varied in order to characterize the VCSEL mode dynamics under different excitation conditions. Prebias currents were varied from 35% to 80% of the dc threshold value (I th ), while current pulse amplitudes ranging from 4 to 20 times I th were added to pump the VCSEL. The pulsed currents were measured using a fast current probe ͑rise and fall timesϽ100 ps͒ constructed specifically for this...

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“…The unpumped quantum wells around the periphery of the implant aperture also provide greater loss to the higher order modes through absorption. Due to the implant aperture, a thermal lens can also arise [10]. Thus, single-mode operation in these hybrid VCSELs will be due to a combination of selective carrier injection, thermal lensing, and peripheral optical loss.…”

Section: Theory and Modellingmentioning

confidence: 99%

Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers

Young

Choquette

Seurin

et al. 2003

IEEE J. Quantum Electron.

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Abstract-The wavelength splitting between the LP 01 and LP 11 modes of selectively oxidized, ion implanted, and hybrid ion implanted/selectively oxidized vertical-cavity surface-emitting lasers is studied by experiment and theory. Measured splittings at threshold show marked differences between the different laser structures due to the effects of index guiding and thermal lensing. Theoretical results were obtained using a vector optical mode solver and show good agreement with experimental results. The hybrid lasers exhibited behavior intermediate between the ion implanted and selectively oxidized lasers and could be optimized for high power single transverse mode emission.

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Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

Cited by 185 publications

References 17 publications

Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

Transverse mode dynamics in vertical cavity surface emitting lasers excited by fast electrical pulses

Comparison of wavelength splitting for selectively oxidized, ion implanted, and hybrid vertical-cavity surface-emitting lasers

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