Performance of a C60+ ion source on a dynamic SIMS instrument

Fahey, A. J.; Gillen, Greg; Chi, P; Mahoney, Christine M.

doi:10.1016/j.apsusc.2006.02.263

Cited by 17 publications

(16 citation statements)

References 5 publications

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“…These values compare surprisingly well with those determined during inorganic depth profiling of delta dopant layers in semiconductors . For the specific case of 20‐keV C 60 cluster projectiles (as used in the simulations determining the input parameters used here), a depth resolution of approximately 5 nm was observed when profiling across a standard Ni‐Cr multilayer structure . For the case of molecular depth profiling, delta layer systems suitable to assess the depth resolution have recently been developed .…”

Section: Resultssupporting

confidence: 70%

A statistical approach to delta layer depth profiling

Wucher

Krantzman

2012

Surface & Interface Analysis

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We present a simple statistical model describing the removal and relocation of material during a sputter depth profiling experiment. All input parameters are determined from low-fluence molecular dynamics simulations, making the model de facto parameter free. The model can be used to extrapolate data from the molecular dynamics simulations to projectile fluences relevant to sputter depth profiling experiments. As a result, the erosion of the surface is calculated in terms of fluence-dependent filling factors of different sample layers. Using input data determined for the 20-keV C 60 cluster bombardment of silicon, it is found that a steady-state erosion profile is reached after removal of approximately 20 monolayer equivalents of material. Plotting the contribution of particles from a specific layer to the instantaneous sputtered flux, one can directly determine the delta layer response function predicted from such a model. It is shown that this function can be parameterized by the semiempirical Dowsett response function, and the resulting fitting parameters are compared with published depth profile data. The model is then used to study the role of different processes influencing the observed depth resolution. We find that the statistical nature of the sputtering process suffices to explain many features of experimentally measured delta layer depth profiles.

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Section: Resultssupporting

confidence: 70%

A statistical approach to delta layer depth profiling

Wucher

Krantzman

2012

Surface & Interface Analysis

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“…Despite the obvious successes of C þ 60 bombardment of polymeric materials, deposition of carbon and large topography features can be associated with C þ 60 beams at lower energies (Fahey et al, 2006;Gillen et al, 2006a;Green et al, 2009). This is a particular problem with Si substrates, which is often used as a support for polymer thin films.…”

Section: Standard Methods Astm E1428-91 Uses the Following Equation; Dmentioning

confidence: 98%

Cluster secondary ion mass spectrometry of polymers and related materials

Mahoney

2009

Mass Spectrometry Reviews

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283

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Cluster secondary ion mass spectrometry (cluster SIMS) has played a critical role in the characterization of polymeric materials over the last decade, allowing for the ability to obtain spatially resolved surface and in-depth molecular information from many polymer systems. With the advent of new molecular sources such as C(60)(+), Au(3)(+), SF(5)(+), and Bi(3)(+), there are considerable increases in secondary ion signal as compared to more conventional atomic beams (Ar(+), Cs(+), or Ga(+)). In addition, compositional depth profiling in organic and polymeric systems is now feasible, without the rapid signal decay that is typically observed under atomic bombardment. The premise behind the success of cluster SIMS is that compared to atomic beams, polyatomic beams tend to cause surface-localized damage with rapid sputter removal rates, resulting in a system at equilibrium, where the damage created is rapidly removed before it can accumulate. Though this may be partly true, there are actually much more complex chemistries occurring under polyatomic bombardment of organic and polymeric materials, which need to be considered and discussed to better understand and define the important parameters for successful depth profiling. The following presents a review of the current literature on polymer analysis using cluster beams. This review will focus on the surface and in-depth characterization of polymer samples with cluster sources, but will also discuss the characterization of other relevant organic materials, and basic polymer radiation chemistry.

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“…Therefore, a cluster ion beam should, in principle, yield better depth resolution compared to an isoenergetic atomic ion beam, with the advantage increasing with increasing projectile nuclearity. A hint in that direction was indeed found for a number of metallic and semiconductor samples under bombardment with cluster ions like SF 5 + , C n − , CsC n − and C 60 + clusters 1, 8–10. In general, it was found that cluster ion beams offer improved depth resolution and a reduction in sputter‐induced topography formation.…”

Section: Introductionmentioning

confidence: 82%

Depth profiling of anodic tantalum oxide films with gold cluster ions

Poerschke

Wucher

2011

Surface & Interface Analysis

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In order to investigate the merits of cluster bombardment for inorganic sputter depth profiling, thin (50-nm) anodic Ta 2 O 5 films were analyzed by ToF-SNMS using 25 keV Au n + projectile ions. The same focused primary ion beam was employed both for sputter erosion and (static) data acquisition. Sputtered neutral particles were postionized by means of single photon ionization using a 157 nm F 2 excimer laser. The results show that, for the amorphous films investigated here, the transition from mono-to polyatomic projectiles does not lead to a significant improvement of the apparent depth resolution.

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Performance of a C60+ ion source on a dynamic SIMS instrument

Cited by 17 publications

References 5 publications

A statistical approach to delta layer depth profiling

A statistical approach to delta layer depth profiling

Cluster secondary ion mass spectrometry of polymers and related materials

Depth profiling of anodic tantalum oxide films with gold cluster ions

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