Performance of 3D capacitors integrated on silicon for DC-DC converter applications

Abstract

The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper focuses on integrated 3D capacitors with high capacitance density fabricated with microfabrication techniques on silicon and in particular DRIE. The fabricated prototypes were characterised: a capacitance density between 29 and 46 nF/mm² was demonstrated up to 800 kHz. An improvement is presented on the equivalent series resistance (ESR), which impedes currently on the component utilisation at higher frequencies.

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“…High-density 3D capacitors are realized with a specific technological process based on high aspect ratio pores etched by DRIE in the silicon substrate [7]. This way, the surface of the electrodes is greatly enhanced.…”