Performance model for uncooled infrared bolometer arrays and performance predictions of bolometers operating at atmospheric pressure

Niklaus, Frank; Decharat, Adit; Jansson, Christer; Stemme, G.

doi:10.1016/j.infrared.2007.08.001

Cited by 72 publications

(51 citation statements)

References 26 publications

(120 reference statements)

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Section: Theory Of Uncooled Microbolometersmentioning

confidence: 99%

“…Infrared imaging systems based on uncooled bolometer arrays can today reach NETDs of as low as 25 mK with a F-number of the infrared optics of F = 1 [1,[8][9][10][11]. A detailed analysis of the bolometer design parameters influencing the NETD is provided in [10,11]. From this analysis it can be seen that, to achieve a low NETD (equivalent to high bolometer sensitivity), the two most important design parameters for the temperature sensitive IR thermistor material are to obtain a high TCR, and at the same time minimum LF noise from the thermistor material.…”

Section: Theory Of Uncooled Microbolometersmentioning

confidence: 99%

“…IR imaging technology can be separated in two main realms; cooled detectors working with direct photon detection in the infrared wavelength, and uncooled thermal IR detectors that are based on heat absorption and the electrical measurement of the resulting temperature change of the detector membrane. Today, the vast majority of commercially available IR imaging systems utilizes uncooled IR bolometer focal plane array technology [5][6][7][8][9][10][11][12][13][14][15][16][17]. Uncooled IR bolometer focal plane arrays consist of matrixes of small suspended bolometer sensor membranes that are placed on top of CMOS-based integrated electronic circuits as depicted in Figure 1a.…”

Section: Introductionmentioning

confidence: 99%

“…These uncooled IR bolometer arrays have typical resolutions of 160x120, 320x240 and 640x480 pixels and bolometer pitches down to 17 µm x 17 µm [10]. The bolometer thermistor materials of commercially available bolometer arrays are either vanadium oxide (VOx) [11] (e.g. Flir Systems and BAE) or specially developed amorphous silicon [15] (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…This allows the thermistor material to be optimized. The two most important performance parameters for IR bolometer thermistor materials are a high temperature coefficient of resistance (TCR) and a minimum low-frequency (LF) noise [10,11]. This paper is organized in three main sections.…”

Section: Introductionmentioning

confidence: 99%

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Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Malm¹,

Kolahdouz²,

Forsberg

et al. 2012

MRS Proc.

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Semiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.

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Section: Theory Of Uncooled Microbolometersmentioning

confidence: 99%

Section: Theory Of Uncooled Microbolometersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Malm¹,

Kolahdouz²,

Forsberg

et al. 2012

MRS Proc.

Self Cite

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Conducting‐Polymer Bolometers for Low‐Cost IR‐Detection Systems

Håkansson

Shahi

Brill

et al. 2019

Adv Elect Materials

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Semiconducting polymers are promising materials for manufacturing optoelectronic devices, such as large‐area solar cells or small light‐emitting diodes, through the use of printing technologies. In their oxidized form, π‐conjugated polymers become good electrical conductors and their optical absorption shifts to the infrared region. It is demonstrated that conducting polymers can be integrated in bolometers for IR detection. A bolometer is a thermally isolated thin device that absorbs IR radiation and translates a temperature change into a change in electrical resistance. While commercial bolometers are usually made of complex architectures comprising several materials (that is, an IR absorbing layer, a conducting layer, and a thermally insulating layer), the first polymer bolometer is demonstrated with a freestanding layer of poly(3,4‐ethylene‐dioxythiophene) having high IR absorption, low thermal conductivity, and good thermistor action in one single layer. The solution processability of conducting polymers, their compatibility with high‐resolution printing technologies, and their unique combination of optoelectronic properties can lead to a breakthrough for low‐cost uncooled IR cameras, which are in high demand for security and safety applications.

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Vanadium Oxides: Synthesis, Properties, and Applications

Lamsal

Ravindra

2019

Semiconductors

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Performance model for uncooled infrared bolometer arrays and performance predictions of bolometers operating at atmospheric pressure

Cited by 72 publications

References 26 publications

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

Conducting‐Polymer Bolometers for Low‐Cost IR‐Detection Systems

Vanadium Oxides: Synthesis, Properties, and Applications

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