Performance limitations of silicon bipolar transistors

Gaur, S.P.

doi:10.1109/jssc.1979.1051183

Cited by 10 publications

(2 citation statements)

References 19 publications

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“…6) and (A. 7), as was done in [81,82], except for an uncommon special case. This special case is that of symmetric bandgap narrowing, for which the shifts in the conductionand valance-band edges are equal in magnitude-which rarely occurs [84]--and for which Boltzmann statistics describe the distribution of the majority carriers-which is often a poor approximation.…”

Section: Cmentioning

confidence: 93%

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Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells / by Muhammed Ayman Shibib.

Shibib¹

1979

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This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices. A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi-Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical vn analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution. VI 11 CHAPTER I to Auger recombination are responsible for the large emitter recombination currents observed in pn-junction devices.

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Section: Cmentioning

confidence: 93%

“…Papers that have accounted for bandgap narrowing in computeraided numerical analysis [17, [80][81][82] have not defined the pre-exponential factors that appear in the general forms of the auxiliary relations valid for heavily doped semiconductors.…”

Section: Cmentioning

confidence: 99%

Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells / by Muhammed Ayman Shibib.

Shibib¹

1979

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Triple ion implantation technique for formation of shallow n p n bipolar transistor structures in silicon

Tsaur

Woodhouse

1984

Applied Physics Letters

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Shallow-emitter, narrow-base npn bipolar transistor structures have been obtained by implantation of B+ and As+ ions into amorphous Si layers formed by the prior implantation of Si+ ions. Thermal annealing results in recrystallization of the amorphous layers by solid phase epitaxy and activation of the implanted dopant atoms. Emitter-base junction depths and base widths of ∼0.10 μm, as determined by secondary ion mass spectroscopy analysis, have been achieved both for single-crystal Si samples and for samples with poly-Si emitter contacts. Transmission electron microscopy shows that the recrystallized layers are almost free of defects near the emitter-base and base-collector junctions. Discrete bipolar transistors with good electrical characteristics have been fabricated using this technique.

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Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC

Chuang

Law

1998

IEEE Trans. Electron Devices

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Abstract-An analytical model describing the dc voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe BJT's with double polysilicon technology is presented. It is shown that the bias dependent debiasing effect in the base polysilicon contacts causes an unequal division of base current between two base polysilicon contacts and results in a redistribution of base current in the base regions at different levels of current injection. The base resistance is also modulated by this current re-distribution effect at different biases. The change of base resistance with bias is calculated and the results show the importance of the distributed effects in the base polysilicon region in determining the base resistance.

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Performance limitations of silicon bipolar transistors

Cited by 10 publications

References 19 publications

Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells / by Muhammed Ayman Shibib.

Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells / by Muhammed Ayman Shibib.

Triple ion implantation technique for formation of shallow n p n bipolar transistor structures in silicon

Three-dimensional base distributed effects of long stripe BJT's: base resistance at DC

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