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2019
DOI: 10.1007/s11664-019-07581-0
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Performance Investigation of Mott-Insulator LaVO3 as a Photovoltaic Absorber Material

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Cited by 18 publications
(7 citation statements)
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“…The average lattice strain showed ε = 0.202. The dislocation density δ is formulated by the equation [58][59][60] : Consequently, the dislocation density was 1.76 × 10 9 cm -2 . The determined dislocation density agrees with previously reported data in the literature [61][62][63] .…”
Section: Resultsmentioning
confidence: 99%
“…The average lattice strain showed ε = 0.202. The dislocation density δ is formulated by the equation [58][59][60] : Consequently, the dislocation density was 1.76 × 10 9 cm -2 . The determined dislocation density agrees with previously reported data in the literature [61][62][63] .…”
Section: Resultsmentioning
confidence: 99%
“…Perovskite oxides such as LaVO 3 films are well known as ideal materials for optoelectronic devices due to their high absorption in the visible region. [19][20][21][22]. Although these properties have been demonstrated in prior research on LaVO 3 -based optoelectronic devices [19][20][21][22], most of these properties were achieved on opaque substrates.…”
Section: Introductionmentioning
confidence: 96%
“…A wide spectrum of materials has been investigated to improve the stability and efficiency of perovskite solar cells. Common examples of hole-transport layers (HTLs) are 2,2″,7,7″-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′spirobifluorene (Spiro-OMeTAD), [39,67,163] poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), [162] nickel oxide (NiO), [164] poly(3-hexylthiophene-2,5-diyl) (P3HT), [165] triphenylamine (TPA), [166,167] and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), [106] while typical electron-transport layers (ETLs) are titanium oxide (TiO 2 ), [95,168,169] zinc oxide (ZnO), [170] C 60 , [48,171] [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) [116,172,173] and indene-C 60 bisadduct (ICBA). [59,174] The choice of CTLs is dependent on the solar cell architecture (e.g., n-i-p or p-i-n).…”
Section: Interface Engineeringmentioning
confidence: 99%