Performance investigation of low-power flexible n-ZnO/p-CuO/n-ZnO heterojunction bipolar transistor: Simulation study

Yousefizad, Milad; Zarasvand, Mahdi Molaei; Baqeritabar, Mohsen; Ghezelayagh, Mohammad Mahdi; Farahi, Alireza; Ghafouri, Tara; Raissi, Farshid; Zeidabadi, Maziar Ahmadi; Manavizadeh, Negin

doi:10.1016/j.micrna.2023.207594

Cited by 6 publications

(1 citation statement)

References 75 publications

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“…To overcome these challenges and continue the trajectory of Moore's Law researchers have been investigating alternative materials and transistor designs, Copper oxide, with its unique properties, has emerged as a promising candidate for next-generation transistors. Recently, transition series for different applications such as transistors, solar cells, gas sensors, optical sensors and etc are used [8][9][10][11][12][13][14][15][16]. Copper (II) oxide (CuO) is a remarkable transition metal oxide known for its intricate interplay between various physical properties, including spin, charge, orbital, and vibrational characteristics.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Copper Oxide-Based Heterojunction Bipolar Transistor: Design, Modeling, and Performance Analysis

Yousefizad

2023

JCHAR

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The goal of this study is to elucidate the step-by-step process of incorporation of a Cu2O confinement layer in an oxide semiconductor-based heterojunction bipolar to explore its impact on gain enhancement. The emitter and collector layers consist of CuO. The material of the base layer is silicon, with a confinement layer with Cu2O added between the emitter and base regions. The transistor is designed as a PNP structure and uses the inherent characteristics of copper oxide as a p-type, which means ion-implant is a high-temperature process, so removing it and fabricating the organic subtract will be conceivable. The research involved the simulation of transistors with and without a Cu2O confinement layer using state-of-the-art semiconductor processing techniques. Simulation results exemplify that proposed the potential barrier caused by the confinement layer prevents the electrons from moving from the base to the emitter layer. The improvement in injection efficiency caused the increase in DC gain. In SILVACO, device parameters, such as doping profile, dimensions, and material properties, were considered and modeled. Finally, the result was as the AC gain escalated to 52dB, the cut-off frequency achieved was 12 GHz, and by considering a wide range of base-emitter voltages the DC gain became >1000. This transistor with an AC gain of 52dB has applications as an audio and radio frequency amplifier and oscillator that generates a periodic waveform, it is useful in signal processing circuits, communication systems, and sensor applications to utilize in sensor circuits to amplify signals from sensors.

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Section: Introductionmentioning

confidence: 99%

High-Performance Copper Oxide-Based Heterojunction Bipolar Transistor: Design, Modeling, and Performance Analysis

Yousefizad

2023

JCHAR

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A 3D-printed millifluidic device for triboelectricity-driven pH sensing based on ZnO nanosheets with super-Nernstian response

Ghafouri

Manavizadeh

2023

Analytica Chimica Acta

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Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar cells by incorporating an InAlGaP hole reflector layer

Shahnooshi,

Orouji

2024

Optics Communications

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Performance investigation of low-power flexible n-ZnO/p-CuO/n-ZnO heterojunction bipolar transistor: Simulation study

Cited by 6 publications

References 75 publications

High-Performance Copper Oxide-Based Heterojunction Bipolar Transistor: Design, Modeling, and Performance Analysis

High-Performance Copper Oxide-Based Heterojunction Bipolar Transistor: Design, Modeling, and Performance Analysis

A 3D-printed millifluidic device for triboelectricity-driven pH sensing based on ZnO nanosheets with super-Nernstian response

Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar cells by incorporating an InAlGaP hole reflector layer

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