Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels

High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation

“…The GIXRD pattern did not reveal any characteristic peaks associated with the ITZO film, indicating its amorphous nature. The optical absorption spectrum was measured by using a UV–vis–NIR spectrometer to investigate the optical band gap of the ITZO film on a glass substrate after annealing at 290 °C for 1 h. The relationship between the bandgap of ITZO and the absorption coefficient is described by the following equation: ( α h ν ) 1 / n = A false( h ν − E normalg false) where α is the absorption coefficient, h is the Planck constant, v is the incident photon frequency, E g is the bandgap, and A is a constant. n = 1/2 for direct bandgap semiconductors or 2 for indirect bandgap semiconductors .…”

“…n = 1/2 for direct bandgap semiconductors or 2 for indirect bandgap semiconductors. 29 The ITZO films investigated in our study belong to the direct bandgap semiconductors. By extrapolating the absorption spectrum, the E g of the ITZO film is determined to be 3.6 eV, as illustrated in Figure 1b.…”

“…The optical absorption spectrum was measured by using a UV–vis–NIR spectrometer to investigate the optical band gap of the ITZO film on a glass substrate after annealing at 290 °C for 1 h. The relationship between the bandgap of ITZO and the absorption coefficient is described by the following equation: where α is the absorption coefficient, h is the Planck constant, v is the incident photon frequency, E g is the bandgap, and A is a constant. n = 1/2 for direct bandgap semiconductors or 2 for indirect bandgap semiconductors . The ITZO films investigated in our study belong to the direct bandgap semiconductors.…”