Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Zhang, Shuo; Liu, Bin; Zhang, Xi; Wen, Congyang; Sun, Haoran; Liu, Xianwen; Yao, Qi; Zi, Xiaorui; Bao, Zongchi; Xiao, Zijin; Zhang, Yunsong; Yuan, Guangcai; Guo, Jian; Ning, Ce; Shi, Dawei; Wang, Feng; Yu, Zhinong

doi:10.1016/j.mssp.2023.108093

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Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Cited by 2 publications

References 29 publications

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

Effect of Rapid Cooling Using Low-Temperature Deionized Water on Ingazno (Igzo) Thin-Film Transistors

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