Performance improvement in photosensitive organic field effect transistor by using multi-layer structure

Kösemen, Zühal Alpaslan; Kösemen, Arif; Öztürk, Sadullah; Canımkurbey, Betül; Erkovan, Mustafa; Yerli, Yusuf

doi:10.1016/j.tsf.2018.12.048

Cited by 12 publications

(10 citation statements)

References 43 publications

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“…As shown in Figure d, under the consideration of the threshold voltage, the right-hand side of the V-shaped transfer curves (the electron-dominated regime) were well aligned. When photogating is the major source of the photocurrent, the drain current under illumination can be expressed as the product of the transconductance and the threshold voltage shift, as shown in eq ; the photogating effect was confirmed by the overlap in the shifted electron current levels in accordance with the work of Hamilton et al …”

Section: Resultssupporting

confidence: 70%

“…According to previous studies, 10,11,13,14 the nonlinear increase in Q s and R s in accordance with an increase in irradiance can be expressed by eq 12…”

Section: = −δmentioning

confidence: 93%

“…14 The photoresponse caused by trapped charge carriers is referred to as photogating, and the magnitude of the photocurrent has a logarithmic irradiance dependence which can be expressed as the product of the threshold voltage shift and the transconductance. 14 For other materials such as poly(3,3′′′didodecylquarter-thiophene) (PQT-12), the photogenerated holes and electrons can be extracted from the channel and the photogenerated carriers directly contribute to the current. This effect is called photoconduction, and it results in an apparent shift in the threshold voltage with a linear irradiance dependence.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The irradiation dependence of the threshold voltage shift was initially described for high-electron mobility transistors, and it is based on the assumption of two-dimensional electron gas (2-DEG). , Thereafter, this model was employed for field-effect transistors such as MoS 2 phototransistors, organic field-effect transistors (OFETs) such as poly(3-hexylthiophene) (P3HT) nanofibers, and Cu–phthalocyanine (CuPc)-P3HT multilayers . The photoresponse caused by trapped charge carriers is referred to as photogating, and the magnitude of the photocurrent has a logarithmic irradiance dependence which can be expressed as the product of the threshold voltage shift and the transconductance . For other materials such as poly(3,3′′′-didodecylquarter-thiophene) (PQT-12), the photogenerated holes and electrons can be extracted from the channel and the photogenerated carriers directly contribute to the current.…”

Section: Introductionmentioning

confidence: 99%

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Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Tarsoly

Pyo

2020

J. Phys. Chem. C

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Organic semiconductors are currently implemented in photoresponsive devices due to their versatility. The aim of this study was to investigate the photoresponsive properties of an ambipolar field-effect transistor with only one laterally stacked C8-BTBT/PTCDI-C5 semiconductor crystal wire prepared using solution processing and mechanical cutting. The photoresponsive characteristics of the device were investigated under different irradiance levels, and the photogating effect was found to be the major contributor to the photocurrent. From the dynamic response of the device under light pulses, it was found that the trapping and release processes are dependent on the irradiance. A mathematical description of the dynamic response was proposed based on the trapping and release of photogenerated holes at deep and shallow trap sites with two discrete energy levels. Although the trapped charge density and trapping rates in the shallow traps exhibited expected trends under different irradiances, the charges in the deep traps exhibited anomalous irradiance dependence. On the basis of the findings, a description for the trapping behavior in the laterally stacked C8-BTBT/PTCDI-C5 system was proposed, and the usefulness of the simple kinetic model of trapping and release was analyzed.

show abstract

Section: Resultssupporting

confidence: 70%

“…According to previous studies, 10,11,13,14 the nonlinear increase in Q s and R s in accordance with an increase in irradiance can be expressed by eq 12…”

Section: = −δmentioning

confidence: 93%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Tarsoly

Pyo

2020

J. Phys. Chem. C

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“…The P3HT/CuPc/P3HT multi‐layer structure was another example proposed by Yerli et al. . Considering the trap states at CuPc/PMMA interface disrupting the positive charge accumulation, the introduction of P3HT between the CuPc and PMMA could effectively solve this problem.…”

Section: Recent Progress In Optsmentioning

confidence: 99%

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

Huang

Fuchs

et al. 2019

ChemPhotoChem

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Phototransistors combine light detection and signal amplification functions into a single device and are regarded as one of the most important components for optoelectronic integration. In recent years, organic phototransistors (OPTs) have attracted worldwide interest because of their potential advantages of low cost, light weight, excellent flexibility and broadband detection. In this review, a brief description of the working mechanisms and performance metrics of OPTs is presented. Afterwards, the recent progress of OPTs based on the conventional planar fieldeffect transistor structure is presented. Furthermore, from the perspective of novel device architectures and interface engineering, strategies for improving the performance of OPTs are discussed. Flexible optoelectronic devices based on OPTs for potential application in next-generation wearable and humanfriendly electronics are also highlighted. Finally, an outlook for future research directions and challenges for OPTs is provided.

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Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C₅ Crystals Embedded in C₈‐BTBT Thin Film

Tarsoly

Choi

You

et al. 2021

Adv Elect Materials

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Most organic thin film‐based phototransistors exhibit an increase in current under illumination owing to the trapped photogenerated minority charge carriers, which enhance the accumulation of majority carriers in the semiconductor layer of the device. Recent research reveals that, on employing a unique active layer structure, phototransistor devices exhibit abnormal photoresponse behaviors under certain conditions: hole‐dominated current decreases under illumination and shows an anomalous dependence on irradiance. The current decreases with increasing irradiance. When the irradiance is increased further, a moderate current increase is observed. Under a constant negative bias, when a discrete light pulse is turned on, the current decreases sharply and then slowly increases to saturation in the beginning and it starts to increase when illumination is ceased. These anomalies are analyzed, and the changes in current are modeled using a mathematical model based on the simultaneous trapping and release of both photogenerated holes and electrons.

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Performance improvement in photosensitive organic field effect transistor by using multi-layer structure

Cited by 12 publications

References 43 publications

Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C₅ Crystals Embedded in C₈‐BTBT Thin Film

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Performance improvement in photosensitive organic field effect transistor by using multi-layer structure

Cited by 12 publications

References 43 publications

Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Photocurrent Response in Ambipolar Transistors Based on Single Laterally Stacked Crystals: The Role of Charge Trapping and Release

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film

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Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C₅ Crystals Embedded in C₈‐BTBT Thin Film