Performance Improvement for Spray-Coated ZnO TFT by F Doping With Spray-Coated Zr–Al–O Gate Insulator

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

“…The ZAO deposited by spray pyrolysis at the substrate temperature of 350 °C has no bubbles and no coffee rings and shows a smooth, uniform film surface and amorphous structure. [ 18,22,23 ] The mass density of ZAO film is found to be 4.03 g cm −2 . [ 22 ] A coplanar a‐IGZO TFT has an offset between channel and source/drain electrodes with an offset length of 3 μm each.…”

“…The process was repeated 2 cycles to obtain %5 nm ZAO layer. [23] TFT Fabrication: We fabricated a-IGZO TFTs with a self-aligned coplanar structure passivated with the ZAO layer. First, a 200 nm-thick SiO 2 layer was deposited on the glass by plasma-enhanced chemical vapor deposition (PECVD) as a buffer layer.…”

“…[17] The deposition parameters by spray pyrolysis such as substrate temperature, flow rate, nozzle speed, and distance between substrate and nozzle should be optimized to produce uniform, coffee ring-free, high-quality thin films over large areas. [18][19][20][21][22][23] Note that adding a stabilizer (ammonium acetate) in solution for spray coating increases the solubility of the solution and enhances the film quality by reducing the defects. [18] We have reported the high-quality ZrAlO x (ZAO) film by spray coating as a high-к gate insulator, which is used in this work for gas barrier.…”

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

“…By H incorporation, the surface roughness of ZnO is reduced and mobility can be improved by passivating the trap states at grain boundaries and Zn interstitial . The multicomponent M–O semiconductors such as indium–gallium–zinc oxide (IGZO), aluminum–indium zinc oxide (AIZO), indium zinc oxide (IZO), indium gallium oxide (IGO), LiGdZnO, LaZnO, F-doped ZnO, zinc–tin–oxide (ZTO), and indium–zinc–tin oxide (IZTO) TFTs have been studied to improve the carrier mobility and bias stability. ,,− Note that the mobility and bias stability of TFTs depend on the electronic structure of the oxide semiconductor. − Multistack heterojunction and superlattice structures are used to improve the device performance. In a heterojunction structure, the enhancement of mobility by the formation of 2-dimensional electron gas (2DEG) at the interface of two M–O junctions can be possible because of the conduction band offset at the boundary.…”

8‐2: Low Cost Manufacturing of AlZnO/ZnO Thin Film Transistor with High Mobility Over 80 cm2/Vs and Positive Threshold Voltage by Spray Pyrolysis

“…It is known that the instability of pristine ZnO is related to the grain boundary defects related to oxygen vacancy and Zn interstitial. Many researchers used multi-component metal-oxide such as indium-gallium-zinc oxide (IGZO), aluminum-indium-zinc oxide (AIZO), indium-zinc oxide (IZO), LiGdZnO, LaZnO, FZnO and indium-zinc-tin oxide (IZTO) [6][7][8][9][10] TFTs to improve the carrier mobility and bias stability for display application. It is well known that the mobility and biasstability of TFTs depends on structural property of semiconductor with mechanical design of device.…”