Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction

Özen, Yunus; Akin, Nihan; Kınacı, Barış; Özçelik, Süleyman

doi:10.1016/j.solmat.2015.01.021

Cited by 38 publications

(23 citation statements)

References 42 publications

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“…Among the multijunction solar cells, the III-V semiconductor compound-based solar cells are the commercially available cells with the highest reported efficiency [12,13] reaching 46% under high solar concentration [2,3]. In this regard, the InGaP alloy is a vital material for highefficiency solar cells as it absorbs the visible part of the solar spectrum [14][15][16]. Besides, the GaAs compound (1.42 eV) absorbs the Near-Infrared Region (NIR) of the spectrum.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, the GaAs compound (1.42 eV) absorbs the Near-Infrared Region (NIR) of the spectrum. Therefore, the lattice-matched In 0.49 Ga 0.51 P grown on the GaAs substrate has great technological importance as the InGaP/GaAs solar cell structure absorbs a substantial part of the spectrum [15,17]. So, InGaP/GaAs DJ solar cells have been widely studied due to their superb bandgap arrangement in lattice-matched systems [18].…”

Section: Introductionmentioning

confidence: 99%

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Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Salem

Saif

Shaker

et al. 2021

International Journal of Photoenergy

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In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Salem

Saif

Shaker

et al. 2021

International Journal of Photoenergy

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“…To construct efficient 2T tandems, more attractive to commercial products, current matching between series‐connected subcells is required by their bandgap adjustment. GaAs ( E g ≈ 1.4 eV) PV has been successfully extended to monolithic 2T tandem by epitaxially growing a wide‐bandgap III–V semiconductor‐based PV structure such as indium gallium phosphide (InGaP) ( E g , 1.80–1.90 eV) on the GaAs single‐junction structure as a top‐cell using metalorganic chemical vapor deposition (MOCVD) process . However, this approach increases overall fabrication cost (e.g., from ≈1240 to ≈1660 $ m −2 ), and a complicated III–V tunnel junction (TJ) diode to connect those subcells without parasitic absorption and recombination loss are inevitable.…”

Section: Introductionmentioning

confidence: 99%

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Kim

Han

et al. 2019

Advanced Energy Materials

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Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two‐terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel‐junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high‐efficiency and stable wide‐bandgap perovskite PVs having comparable bandgap to InGaP (1.8–1.9 eV) are developed, which can be stable low‐cost add‐on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin‐film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.

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“…Diğer enerji kaynakları direkt ya da dolaylı olarak güneş enerjisinden türemiştir. Güneş ışığını doğrudan elektrik enerjisine dönüştüren yarıiletken aygıtlara güneş hücreleri (Fotovoltaik hücre (FV)) denir [1,2]. Güneş hücre sistemlerinde Silikon (Si), ince film ve III -V grubu çok eklemli güneş hücreleri kullanılmaktadır [3].…”

Section: Introductionunclassified

MoO3 Tampon Tabakasının CdTe-Bazlı Güneş Hücresinin Verimliliği Üzerine Etkisinin İncelenmesi

Özen

2019

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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olmak üzere iki adet numune üretildi. MoO3 tabakası CdTe ve arka kontağın metal elektrotu arasına tampon tabaka olarak büyütüldü. Güneş hücreleri cam/flor katkılı kalay oksit alttaş üzerine Sıçratma (Sputtering) sistemi ile büyütüldü. MoO3 tampon tabakası içeren CdS/CdTe güneş hücresinin morfolojik özellikleri atomik kuvvet mikroskobu (AFM) ve taramalı elektron mikroskobu (SEM) ölçümleri ile incelendi. Ayrıca, güneş hücre yapılarının elektriksel çıkış parametrelerini belirlemek için hem geleneksel CdTe-bazlı güneş hücresinin hem de MoO3 tabakası içeren CdTe-bazlı güneş hücresinin fabrikasyonları yapıldı. Akım-voltaj ölçümleri oda sıcaklığında karanlık ve 1.5G ışık altında yapıldı. Enerji dönüşüm verimlilik değeri 1 Güneş'de geleneksel ve MoO3 tabakası içeren güneş hücreleri için sırasıyla %8.93 ve %10.31 olarak elde edildi. MoO3 tabakasının CdTe-bazlı güneş hücresine entegrasyonunun hücre verimliliğini %15.45 oranında arttığı gözlemlendi.

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Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction

Cited by 38 publications

References 42 publications

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

MoO3 Tampon Tabakasının CdTe-Bazlı Güneş Hücresinin Verimliliği Üzerine Etkisinin İncelenmesi

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