Performance-Enhancing Sulfur-Doped TiO2 Photoanodes for Perovskite Solar Cells

Mutalib, Mashetoh Abd; Ludin, Norasikin Ahmad; Su’ait, Mohd Sukor; Davies, Matthew; Sepeai, Suhaila; Teridi, Mohd Asri Mat; Noh, Mohamad Firdaus Mohamad; Ibrahim, Mohd Adib

doi:10.3390/app12010429

Cited by 7 publications

(4 citation statements)

References 31 publications

(38 reference statements)

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“…The indirect band gap (Eg) of pure TiO 2 and 1 mol% Er-doped TiO 2 was determined to be 3.45 eV and 2.75 eV, respectively, using the Tauc plot (Figure 4 [b]). This kind of decrement in band gap value was also reported by Mutalib et al (18) The considerable reduction in band gap may have been produced by oxygen vacancies brought on by the doping of Er 3+ ions. (19) https://www.indjst.org/ A CIGS solar cell's efficiency is closely correlated with the buffer layer's refractive index.…”

Section: Uv -Visible Spectroscopic Analysissupporting

confidence: 81%

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Jayachithra,

Elampari,

Meena

2023

IJST

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Objectives: To find a proper rare earth-doped metal-oxide-based buffer layer for CIGS solar cells with improved performance that has less harmfulness than cadmium. Methods: This study concentrated on the synthesis of pure and Erdoped TiO 2 nanomaterials via microwave-assisted hydrothermal method and its characterization results. Additionally, to analyze the performance of TiO 2 and Er-doped TiO 2 as a buffer layer in a CIGS solar cell, numerical simulations were performed using the SCAPS-1D (Solar cell capacitance simulator) software. Findings: The positive outcomes came from the characterization results, which revealed that the synthesized nanomaterials have an anatase phase, microscopic crystallite size, and flower-like shape. The band gap effectively decreases from 3.45 eV for pure TiO 2 to 2.75 eV for Er-doped TiO 2 , which effectively increases the absorption in the visible portion of the solar spectrum. The refractive indices of pure and Er-doped TiO 2 were calculated as 2.37 and 2.50 respectively from their corresponding band gaps. The results from the simulations showed that using a single buffer layer of Er-doped TiO 2 uplifted the performance of the CIGS solar cell, resulting in higher open circuit voltage, increased short-circuit current density with overall efficiency, η = 25.31% compared to pure TiO 2 and CdS-based dual buffer layers. Novelty: For the first time, the Er-TiO 2 nanomaterial was studied as buffer layer material. The numerical simulation and characterization findings justify the adoption of Er-TiO 2 as a buffer layer in CIGS solar cells.

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Section: Uv -Visible Spectroscopic Analysissupporting

confidence: 81%

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Jayachithra,

Elampari,

Meena

2023

IJST

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“…The produced S-doped TiO2 showed high absorbance, photocatalytic activity, and photo-current density. This proved that the increase in the electron collection capacity of the carrier charge and photocurrent density enhanced the PCE by 6.0% and showed a better efficiency of 18%, as shown in Table 3 [84]. It showed that the charge transfer resistance (RCT) in the S-doped TiO2 perovskite device was lower than that of the un-doped TiO2 device.…”

Section: Modification Of Tio2 With Metal Dopingmentioning

confidence: 74%

“…Among the various methods used to enhance the bulk properties of TiO2 ETLs, doping with metals ions has received much attention, as it is a simple process that can lead to improved charge transportation ability, elimination of hysteresis, modification of the band structure, modulated electron mobility, and improved thin film conductivity of the ETL with a high charge extraction capacity [76,77]. The numerous metal dopants that have been reported include tin [42,78,79], iron [80], ruthenium [81,82], sulphur [83,84], niobium [85], zinc [86], tantalum [87], and magnesium [77,88].…”

Section: Modification Of Tio2 With Metal Dopingmentioning

confidence: 99%

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Metal-Doped TiO2 Thin Film as an Electron Transfer Layer for Perovskite Solar Cells: A Review

et al. 2022

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The electron transfer layer (ETL) plays a vital role in achieving high-performance perovskite solar cells (PSCs). Titanium dioxide (TiO2) is primarily utilised as the ETL since it is low-cost, chemically stable, and has the simplest thin-film preparation methods. However, TiO2 is not an ideal ETL because it leads to low conductivity, conduction band mismatch, and unfavourable electron mobility. In addition, the exposure of TiO2 to ultraviolet light induces the formation of oxygen vacancies at the surface. To overcome these issues, doping TiO2 with various metal ions is favourable to improve the surface structure properties and electronic properties. This review focuses on the bulk modification of TiO2 via doping with various metal ions concentrations to improve electrical and optical properties, charge carrier density, and interfacial electron–hole recombination, thus contributing to enhancing the power conversion efficiency (PCE) of the PSCs.

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Performance analysis of un-doped and doped titania (TiO$$_2$$) as an electron transport layer (ETL) for perovskite solar cells

Dharmale,

Srivastava

et al. 2024

J Mol Model

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Performance-Enhancing Sulfur-Doped TiO2 Photoanodes for Perovskite Solar Cells

Cited by 7 publications

References 31 publications

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Metal-Doped TiO2 Thin Film as an Electron Transfer Layer for Perovskite Solar Cells: A Review

Performance analysis of un-doped and doped titania (TiO$$_2$$) as an electron transport layer (ETL) for perovskite solar cells

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