Performance Enhancement of ZnMgO:Al/ZnMgO/CIGSSe Solar Cell With the Combination of CZTGSe HT-ERL Layer

Kumar, Raushan; Kumar, Akhilesh

doi:10.1007/s11664-021-09179-x

Cited by 15 publications

(9 citation statements)

References 68 publications

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“…The absorber's photogenerated excitons can reach the interfaces owing to their low binding energy and long diffusion lengths. In Figure 5(A)–(D), the CuSbS 2 layer thickness varies from 0.05 μm to 0.2 μm and is plotted along the x‐axis, and the carrier concentration varies from 10 16 cm −3 to 10 19 cm −3 and plotted along the y‐axis 14,21 . The graph of V oc and PCE shows similar behavior with rising the N A and thickness of the CuSbS 2 BSF layer 41 .…”

Section: Resultsmentioning

confidence: 77%

“…The aim of the present study is to boost the parameters of SC by declining the recombination rate at the buffer layer. For this, two different buffer layers are taken; in addition, a BSF layer is also taken to minimize the overall rate of recombination in the buffer and window layer 19–21 . The silver sulfide (Ag 2 S) quantum dots are one of the newest items designed to enhance the SC's adaptability towards ultraviolet radiation and increase its absorption.…”

Section: Introductionmentioning

confidence: 99%

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Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Chauhan,

Agarwal,

Srivastava

et al. 2023

Progress in Photovoltaics

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For photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures.

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Section: Resultsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Chauhan,

Agarwal,

Srivastava

et al. 2023

Progress in Photovoltaics

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show abstract

“…In aligned configuration, the resistivity depended on spacing between tips unlike in the square configuration. A rise in temperature caused an increase in thermal vibrations [29] of atomic particles generating lattice irregularities that ended up acting as electron scattering centres [30] increasing resistivity and grain boundaries and hence becoming effective electron scattering sites. As the number of grain boundaries increases [16], resistivity also increases implying an increase in effective electron scattering sites.…”

Section: Fig 3 Influence Of Frequency Of 2 MM Tip-spacing On Resistivitymentioning

confidence: 99%

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

Orori

2023

JOBARI

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In CIGS-based thin-films, bulk defects are believed to represent disturbances either in a regular, periodical arrangement within the atoms or within the crystalline media which influence sheet resistivity. In this study, first a resistivity measurements were carried out on CIGS thin films using the Van Der Pauw technique. Then, a comparison between two Van Der Pauw four-point measurement configurations (aligned and square) were done which showed that the square configuration was the most appropriate configuration that can be recommended to measure thin film sheet resistance of CIGS films. Finally, a numerical simulation using SCAPS-1D software was used to study the influence of bulk defect density in a CIGS films as an absorber layer in a model photocell. Using the simulated data, three operating zones for the model photocell were identified depending based on the concentration of its bulk defect density. The influence of bulk defects on thickness, band gap and doping were then analyzed. It was revealed that when the bulk defect density was less than 5×1013 cm-3 for an absorber of thickness in the order of over 3 μm, a band gap between 1.3 eV-1.4 eV and acceptor density of 1016 cm-3were the optimal operating conditions for the model photocell. It was concluded that the CICS layer used as an absorber can be improved if its bulk defect density is tuned to optimal levels.

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“…In the realm of photovoltaic (PV) applications, copper-indium-gallium-selenide (Cu(In,Ga)Se2, CIGSe) stands out as a promising absorber material, characterized by its near-optimal bandgap, high optical absorption coefficients, and long-term stability [1]. Several studies have reported enhanced solar cell efficiency through the utilization of a CIGSe absorber in conjunction with various buffer layer materials [2][3][4][5]. In a CIGSe structure, when light enters the absorber layer, photons with energy according to their bandgap values can be absorbed by the absorbing layer as much as possible, thus reducing the amount of light loss [6].…”

Section: Introductionmentioning

confidence: 99%

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

Li,

Ho,

et al. 2023

Preprint

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In this paper, the overall performance of Cu-(In,Ga)-Se2 (CIGSe) solar cells was improved in the ultraviolet (UV)–visible wavelength region by two-segment process. In which, adjusting DC sputtering powers (20–40 W) for absorbers (segment I), and metal-alloy compositions (CdS, ZnO/CdS, ZnMgO/CdS and ZnMgO) for buffers (segment II) were explored and characterized. Upon choosing the optimal-30-W CIGSe-absorber (with 0.95-CGI ratio) sputtered by the segment-I process, the Cu-rich film can distinctly boost grain growth, thus reducing the trap state density. After segment-II process as the toxic-CdS alternative, the optimal Zn0.9Mg0.1O-alloy buffer can reach the best conversion efficiency (η = 8.70%) was attained for the environmental protection. Meanwhile, and the overall internal/external quantum efficiencies (IQE/EQE) were improved by 13.15%, respectively for the 2.48–3.62-eV bandgap (short wavelength) range. The developed photovoltaic (PV) module (with 9 optimum-CIGSe cells) exhibits acceptable stability with a variance within ±5% over the 60-day experiment. This discovery in PV-device research contributes to a new scientific understanding of renewable energy. Furthermore, this study undeniably enhances the progress of practical applications for PV-modules in alignment with sustainable development goals. It also actively supports the development of eco-friendly communities.

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Performance Enhancement of ZnMgO:Al/ZnMgO/CIGSSe Solar Cell With the Combination of CZTGSe HT-ERL Layer

Cited by 15 publications

References 68 publications

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

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Performance Enhancement of ZnMgO:Al/ZnMgO/CIGSSe Solar Cell With the Combination of CZTGSe HT-ERL Layer

Cited by 15 publications

References 68 publications

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Influence of Bulk Defect Density on the Efficiency of CIGS Based Photovoltaic Cell/Solar Cell

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

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Product

Resources

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Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer