Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Hsu, Chia-Wen; Chen, Sheng-Yi; Liou, Jian-Kai; Chen, Wei-Cheng; Chang, Chih-Han; Chen, Chun‐Yen; Cheng, Shiou–Ying; Guo, Der-Feng; Liu, Wen‐Chau

doi:10.1109/ted.2017.2691411

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…Kim et al and Sheu et al proved that the modified p-pad electrodes improve device reliability by facilitating uniform current flow [15,16]. Apart from these, the insertion of a current blocking layer beneath the p-pad electrode [17,18], the transparent conductive layer, and the current spreading layer is also able to promote uniform current spreading [19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

Wang

Zhang

et al. 2020

Materials

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To obtain excellent current spreading performance of ultraviolet light-emitting diodes (UVLEDs), a 60-period stacked Si modulation-doped n-AlGaN/u-GaN structure is proposed to replace the traditional n-AlGaN structure. The high-resolution X-ray diffraction ω-scan rocking curves show that the periodic growth of AlGaN and GaN layers plays a positive role in reducing dislocation density. Compared with the conventional UV light-emitting diodes (LEDs), light emission micrographs of devices with a multi-layer stacked n-AlGaN/u-GaN structure reveal higher brightness and a more uniform distribution. In addition, the output power and external quantum efficiency under a 20-mA injection current are increased by 22% and 26.5%, respectively. Experimental and simulation results indicate that a multi-layer stacking structure can alleviate the current crowding effect in four ways:(1) a reduction in dislocation density; (2) replacement of quasi-two-dimensional electron transport with electronic bulk transport to enhance electron mobility; (3) an increase in electron concentration without improving the impurity concentration; and (4) a weakening of the electron scattering effect by reducing the impurity concentration.

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