Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Chen, Wei-Cheng; Niu, Jing-Shiuan; Liu, I-Ping; Lee, Yu-Lin; Cheng, Shiou–Ying; Guo, Der-Feng; Liu, Wen‐Chau

doi:10.1109/ted.2020.3025844

IEEE Trans. Electron Devices

2020

DOI: 10.1109/ted.2020.3025844

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Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Wei-Cheng Chen

Jing-Shiuan Niu

I-Ping Liu³

et al.

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Cited by 3 publications

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“…[1][2][3][4][5][6][7][8][9] However, based on the remarkable difference in refractive index between the surrounding air (n = 1) and GaN (n = 2.5), the critical angle of total internal reflection (TIR) is only of 23.5°, which seriously suppresses the total light output attributed to the lower light extraction efficiency (LEE) and the lower external quantum efficiency (EQE) of GaN/InGaN LEDs. [10][11][12][13] Recently, various methods, e.g., pattern sapphire substrate, 14 backside reflector, 15 antireflection layer, 16 textured surfaces and sidewalls, 17,18 microhole array, 19 photonic crystal structure, 20 and hybrid surface structure 21 have been reported to upgrade the performance of GaN/InGaN LEDs. Moreover, the current spreading (CS) is an important issue for GaN/InGaN LEDs.…”

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confidence: 99%

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

Niu

Hsu

Tsai

et al. 2022

ECS J. Solid State Sci. Technol.

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An interesting device design including a zirconium oxide (ZrO2) current blocking layer (CBL) and a ZrO2 surface passivation layer (SPL) is employed to manufacture a GaN/InGaN light-emitting diode (LED). Based on the inherently good performance of ZrO2, the current spreading effect and the undesired surface leakage are efficiently enhanced and suppressed, respectively. Energy-dispersive X-ray spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy are used to study the relevant properties. It is found that by series calibration, 50 nm is the proper thickness of the ZrO2 CBL and SPL. The peak emission wavelength of the proposed LEDs is around 452 nm. Experimentally, at the operating condition of 110 A/cm2, the proposed Device L3 with a 50 nm thick ZrO2 CBL and a 50 nm thick ZrO2 SPL demonstrates improvements of 66.1% in light output power (LOP) and 64.5% in wall plug efficiency as compared to a traditional Device L1 without the specific design. Furthermore, the proposed Device L3 presents a notable enhancement in the light emission mapping image in comparison to the traditional LED. So, the proposed device design which incorporates a proper ZrO2 CBL and ZrO2 SPL, is beneficial for manufacturing GaN/InGaN LEDs.

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confidence: 99%

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

Niu

Hsu

Tsai

et al. 2022

ECS J. Solid State Sci. Technol.

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Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 µm Quantum‐Dot Pixels

Huang,

Li,

Zhu

et al. 2024

Advanced Materials

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Monolithic integration of color‐conversion materials onto blue‐backlight micro‐light‐emitting‐diodes (micro‐LEDs) has emerged as a promising strategy for achieving full‐color microdisplay devices. However, this approach still encounters challenges such as the blue‐backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39‐inch micro‐display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer‐scale adhesion of sub‐5 µm QD‐pixels on blue‐backlight micro‐LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high‐efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro‐display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro‐display device, which also lead the road of industrialization process of full‐color micro‐LEDs.

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Photo-curing of thick monomer systems with photoluminescent ZnO nanoparticles photoinitiators

2022

Progress in Organic Coatings

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Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Cited by 3 publications

References 19 publications

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 µm Quantum‐Dot Pixels

Photo-curing of thick monomer systems with photoluminescent ZnO nanoparticles photoinitiators

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Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Cited by 3 publications

References 19 publications

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 µm Quantum‐Dot Pixels

Photo-curing of thick monomer systems with photoluminescent ZnO nanoparticles photoinitiators

Contact Info

Product

Resources

About

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers