Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Sharif, Muhammad Nawaz; Khan, M. Ajmal; Wali, Qamar; Demir, İlkay; Wang, Fang; Liu, Yuhuai

doi:10.1016/j.optlastec.2022.108156

Cited by 24 publications

(5 citation statements)

References 30 publications

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“…19 The energy band offset ratio for conduction band offset and valance band offset for the active region is set to be 0.58. 20 The built-in interface charge, which is caused by spontaneous and piezoelectric polarization, is calculated to be 40% of the theoretical value, with an ambient temperature of 300 K. 21…”

Section: Simulation Structure and Parametersmentioning

confidence: 94%

“…The emission wavelength is set at 265 nm; the reflectivity of mirror is 30%; and the cavity length and the width of DUV-LDs are set at 530 and 4 μm, respectively 19 . The energy band offset ratio for conduction band offset and valance band offset for the active region is set to be 0.58 20 . The built-in interface charge, which is caused by spontaneous and piezoelectric polarization, is calculated to be 40% of the theoretical value, with an ambient temperature of 300 K 21 …”

Section: Simulation Structure and Parametersmentioning

confidence: 99%

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Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

et al. 2022

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To improve the carrier injection efficiency and optimize the performance of the AlGaN-based deep ultraviolet laser diodes (DUV-LDs), one-way step-shaped quantum barriers (OWS-QBs), a symmetrical step-shaped electron blocking layer (SS-EBL), and a symmetrical step-shaped hole blocking layer (SS-HBL) are proposed. Crosslight software is used to simulate the DUV-LDs with a traditional structure, with OWS-QBs, and with OWS-QBs, a SS-EBL, and a SS-HBL. The simulation results and physical mechanism analysis indicate that the SS-EBL, SS-HBL, and OWS-QBs contribute to the increased carrier concentration in the quantum wells, the reduced carrier leakage in the nonactive regions, the increased stimulated emission rate, the reduced threshold current and threshold voltage, and the enhanced output power and electrooptical conversion efficiency of DUV-LDs.

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Section: Simulation Structure and Parametersmentioning

confidence: 94%

Section: Simulation Structure and Parametersmentioning

confidence: 99%

Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

et al. 2022

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“…Based on the work of Arora [46], the Functions of electron and hole mobility variation are calculated. The SRH recombination lifetime, radiative recombination coefficient, Auger recombination coefficient, and energy band offset ratio simulation parameters were selected as 0.58, 0.2 × 10 16 m 3 s, 100 ns, and 1 × 10 46 m 6 s accordingly [47,48].…”

Section: Parameters For Simulationmentioning

confidence: 99%

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Rehman,

Rahman,

Haq

et al. 2024

Phys. Scr.

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As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavelength of 263.7 nm. By implementing this approach, we anticipate achieving higher optical output power by 6%, enhancing the concentration of electron and hole, and reducing the electron current density (356.1 to 342.8) and threshold voltage (4.516 to 4.5 V), and hole current density increases in AlGaN-based ultraviolet LDs. These promising outcomes can be attributed to the effective conduction band barrier height achieved by the optimized electron-blocking layer (EBL).

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“…Meanwhile, absorption loss is particularly prominent in the n-CL, p-WG, and p-CL regions. [30]. Therefore,this paper, the concept of graded layers, is adopted to improve the power of DUV-LD, and an Al-graded WG/p-CL structure is designed at the target emission wavelength of 267 nm.…”

Section: Introductionmentioning

confidence: 99%

Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer

Sang,

Di,

Zong

et al. 2023

Phys. Scr.

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To improve the output power and reduce electron leakage of a deep ultraviolet laser diode and optimize its performance,in this paper, the graded waveguide layer was first applied to a traditional AlGaN based deep ultraviolet laser diode, and four different combinations of the waveguide layer structure were simulated. Then a graded cladding layer structure with reduced thickness was added. Finally, the carrier concentration, energy band diagram, P-I curve, and optical confinement factor were numerically analysed and studied. The results demonstrate that, by using an Al-graded waveguide layer/p-cladding layer structure, the optical confinement factor of a laser diode with an emission wavelength of 267 nm, was 29.34%, and the maximum power was 89.81 mW at 100 mA current.

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Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Cited by 24 publications

References 30 publications

Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer

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