Performance Enhancement of Ag/HfO<sub>2</sub> Metal Ion Threshold Switch Cross-Point Selectors

Grisafe, Benjamin; Jerry, Matthew; Smith, J. A.; Datta, Suman

doi:10.1109/led.2019.2936104

Cited by 32 publications

(31 citation statements)

References 21 publications

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“…We mainly discussed on the active electrode before, now buffer layers and counter electrodes are reviewed here. Grisafe et al [49] proposed a RDTSM with structure of Ag/TiN/HfO 2 /Pt (Figure 10a), in which a TiN buffer layer is inserted as a diffusion barrier between Ag TE and HfO 2 dielectric layer. Due to the low diffusivity of Ag + ions in TiN, Ag injection is restrained to prevent excessive Ag + ions and corresponding over growth of Ag CFs so that stable volatile TS behaviors can be achieved.…”

Section: Other Electrode-related Phenomenonmentioning

confidence: 99%

Section: Transition Between Volatile Ts and Nonvolatile Rs Behaviorsmentioning

confidence: 99%

“…Furthermore, Grisafe et al. [ 49 ] evaluate the effect of the built‐in field on the threshold voltages via different counter electrodes. Figure 10d depicts the energy band diagram of RDTSM structure.…”

Section: Electrodesmentioning

confidence: 99%

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Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun

Song

Yin

et al. 2020

Adv Elect Materials

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In most cases, the current flows uniformly through the device in the HRS and is restricted to a local region with high conductance known as a conducting filament (CF) in the LRS. [3] Among them, a specific memory device is termed as conductivebridge RRAM (CBRAM), where the formation/rupture of metallic conductive filaments are dominated by cation migration and redox processes. [4] Meanwhile, volatile resistance switching behaviors are commonly observed in CBRAM as threshold switching (TS). Analogous to the nonvolatile electrochemical metallization mechanism in terms of materials and structures, [5] the electrical resistance of such a threshold switching memristor (TSM) could decrease by orders of magnitude when an electric field is applied due to the formation of CFs with active metal (such as Ag or Cu) atoms. [6] Differently, the resistance returns back spontaneously after the termination of the external bias, yielding a superior I-V nonlinearity and unique temporal conductance evolution dynamics. [7] Recent years, the threshold switching memristors based on active metals are also called "diffusive memristors" to emphasize the diffusion dynamics of the metal species. [8] To be more comprehensively, redox-diffusive threshold switching memristor (RDTSM) might be the best choice to demonstrate the overall switching behavior. [1a] RDTSM has gained significant attention due to its similar advantages to RRAM, such as the simple structure, great fabricability and integrability, and compatibility with conventional CMOS technology. More importantly, it has great potential in many vital applications, such as two-terminal selectors with high nonlinearity, [9] high-powerefficient synaptic or neuronal devices with novel functions. [8,10] A specific application requires a correspondingly proper device. Figure 1 displays the measurement schematic of the key parameters of RDTSM, including selectivity (or nonlinearity), compliance currents, switching voltages (including threshold voltages and hold voltages),TS mode (unidirectional and bidirectional, as shown in Figure 1a,b, respectively), switching slopes (Figure 1c), response time (including delay and relaxation, as shown in Figure 1d) and endurance, which are all up to the material composition and device structure. [11] Therefore, With the rapid development of information technique in the big-data era, there is an extremely urgent demand for new circuit building blocks, represented by resistive switching memristors with high speed, high-density integration, and power-efficiency, to overcome the limitations of electronic device scaling and thus achieve non-von-Neumann neuromorphic computing. Redox-diffusive threshold switching memristors, based on the volatile formation/rupture of metallic conductive filaments, are attracting great attention for many novel applications, ranging from selectors to synaptic and neuronal devices. Here, how to design a proper redox-diffusive threshold switching memristor is comprehensively introduced, with particular focus on the effect of the devic...

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Section: Other Electrode-related Phenomenonmentioning

confidence: 99%

Section: Transition Between Volatile Ts and Nonvolatile Rs Behaviorsmentioning

confidence: 99%

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Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun

Song

Yin

et al. 2020

Adv Elect Materials

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“…Moreover, among various TS devices, metal ion TS devices (which show abrupt resistive switching through the forming/rupture of metal ion filaments) have been highlighted because they can have a high on/off ratio (≥10 6 ) and fast switching speeds (≤100 ns) [20][21][22][23][24]. Because of those outstanding electrical properties, TS devices have been utilized for other applications, such as phase-transition field effect transistor (FET) as well as cross-point arrays.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, when the threshold voltage is higher than the set voltage, the current becomes restricted by the high off-resistance of the TS device, even if the set voltage is applied to the non-volatile memory device. For balancing those two voltage values, various methods (e.g., adding a diffusion barrier on a dielectric layer and/or changing a bottom electrode material) to adjust the threshold voltage of metal ion TS devices have been studied [22][23][24][25]28]. However, these methods are hardly applied for transparent applications because (i) the number of practical transparent substrates is very limited and (ii) adding a new layer can aggravate the transparency.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

et al. 2020

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Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1, 3:2, and 3:3) were fabricated and studied. The threshold voltage of the devices was increased from 0.9 V to 3.2 V, as the relative contents of Al2O3 layer in the superlattice were increased. At the same time, it is demonstrated that the off-resistance values of the devices were enhanced from 2.6 × 109 to 6 × 1010 Ω as the atomic layer deposition (ALD) cycle ratio of HfO2 to Al2O3 layer was adjusted from 3:1 to 3:3. However, the hold voltage and the on-current values were almost identical for the three devices. These results can be understood using the larger barrier height of Al2O3 layer than that of HfO2 layer.

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Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 10¹⁰) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament

Banerjee

Kim

Lee

et al. 2021

Adv Funct Materials

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This study demonstrates a hyper‐level control of metal‐ion migration through vacancy‐induced‐percolation (VIP) path to maximize the steep‐slope performance of the threshold selector with excellent selectivity and endurance. Highly efficient control over metal‐ion migration through VIP is achieved with sophisticated stack engineering through the material evolution process and refined electrical operation. A thorough analysis of the energetics of metal‐ion‐ and vacancy‐based hybrid filament is performed using density functional theory calculations, which leads to a proper tuning of the biasing scheme. Command over bias‐induced ion migration to control the atomic‐scale filament is the key to maximize the threshold switching (TS) performance. The devices are designed with different diffusive materials and alloys. Precise atomic‐level control is realized with optimized device structure and alloy electrode, which indicates that the TS is safe within the vicinity of quantum contact. Owing to the synergistic impact of localized metal‐ion injection through VIP, alloy electrode material, and atomic‐level filament, the devices exhibit meticulous control of a highly stable TS with a high steep‐slope of <2 mV dec−1, extremely high selectivity of >4 × 1010 with an exceptional endurance >109 cycles, and device yield of 100%, which suggest the applicability of these devices in 1S1R and 1T1R platforms.

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Performance Enhancement of Ag/HfO₂ Metal Ion Threshold Switch Cross-Point Selectors

Cited by 32 publications

References 21 publications

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 10¹⁰) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament

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Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors

Cited by 32 publications

References 21 publications

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament

Contact Info

Product

Resources

About

Performance Enhancement of Ag/HfO₂ Metal Ion Threshold Switch Cross-Point Selectors

Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 10¹⁰) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament