Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…It was often reported that the leakage current could be reduced with physically thicker high-j dielectric from the EOT point of view [163]. Tsai et al reported that the leakage current could be reduced by four orders of magnitude by replacing the 2 nm oxide with hafnia with the same EOT [163]. The leakage current density less than 1 mA/cm 2 (at V FB + 1 V) is still possible with TiN electrode on a 1-nm EOT oxide (see Fig.…”

“…For example, hafnia has a relatively high dielectric constant as compared to Si 3 N 4 and Al 2 O 3 ; high free energy of reaction with Si (47.6 kcal/mole at 727°C) as compared to TiO 2 and Ta 2 O 5 ; larger bandgap ($5.7 eV) than most of the other high-j contenders [130]. A lot of investigations on the material properties and applications of ZrO 2 and HfO 2 have been conducted recently [16,[139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154][155][156]117,[157][158][159][160][161][162][163][164][165][166][167]. Table 5 summarizes the major material, technological, and electrical characteristics of hafnia and zirconia.…”

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

“…Conventional Chemical Oxide (Chem-Ox) IL is formed by wet chemistry at near room temperature (RT) [2]. EOT scaling is achieved via the scavenging technique [3], and those stacks show good gate leakage and mobility.…”

Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- $k$/Metal Gate pMOSFET

“…To eliminate these problems, high-permittivity [high-k (HK)] materials and metal gate (MG) electrodes have been extensively researched to replace conventional SiO 2 gate oxide and poly-gate, respectively, to keep thinning-down of equivalent oxide thickness (EOT) without poly-depletion and boron penetration issues and to lower down the gate leakages [1], [2]. From worldwide studies, hafnium-based (Hf) dielectric and titanium-nitride (TiN) metal have attracted considerable attention as the most promising candidate for HK/MG gate stack [3]- [6]. However, low threshold voltage (V TH ) MG pMOSFET, particularly with small EOT, has been a crucial challenge in the gate first CMOS flow.…”