Performance comparison of p-side-up thin-film AlGaInP light emitting diodes with aluminum-doped zinc oxide and indium tin oxide transparent conductive layers

Tseng, Mei-Chih; Chen, Chi Lu; Lee, Hsin Ying; Lin, Yu Chang; Horng, Ray Hua

doi:10.1364/ome.6.001349

Cited by 10 publications

(4 citation statements)

References 12 publications

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“…The voltage reduction is attributed to the lower series resistance. [29] Based on the analyses above, the stress hardly affects the series resistance, but the interface defects and the substrate transformation indeed vary it. Actually, quite a few interface defects are generated after the InGaP ESL removal by diluted HCl solutions.…”

Section: Resultsmentioning

confidence: 97%

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Zhao¹,

Hu²,

Tang³

et al. 2018

Chinese Phys. B

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We report a type of thin film AlGaInP red light emitting diode (RLED) on a metallic substrate by electroplating copper (Cu) to eliminate the absorption of GaAs grown substrate. The fabrication of the thin film RLED is presented in detail. Almost no degradations of epilayers properties are observed after this substrate transferred process. Photoluminescence and electroluminescence are measured to investigate the luminous characteristics. The thin film RLED shows a significant enhancement of light output power (LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the GaAs parent substrate. The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm 2 and 35 A/cm 2 respectively from electroluminescence. Moreover, reduced forward voltages, stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing. These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes. The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices, especially for thin film types.

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Section: Resultsmentioning

confidence: 97%

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Zhao¹,

Hu²,

Tang³

et al. 2018

Chinese Phys. B

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“…It is worth mentioning that the AZO is not only the seed layer, but also an ohmic contact layer with the GaP window layer. The ohmic contact characteristics of the AZO thin film with the p-GaP:C cap layer is key issue in the performance of the p-side-up thin-film AlGaInP LEDs and has been studied in our pervious paper [12].…”

Section: Resultsmentioning

confidence: 99%

“…However, the effect of ZnO nanorods structure on the performance of thin film p-side up AlGaInP did not be studied. In our previously research [12], we have successfully replaced the ITO by AZO thin film, which directly contacted on the p-GaP windows layer for p-side-up thin-film AlGaInP LED applications. In this work, the ZnO nanorods are further grown on the AZO thin film by hydrothermal method to further improve the LEE.…”

Section: Introductionmentioning

confidence: 99%

Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods

Tseng¹,

Chen²,

Lee³

et al. 2016

Opt. Mater. Express

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ZnO nanorods grown via hydrothermal method on the aluminum-doped zinc oxide (AZO) thin film were used to fabricate high-brightness p-side-up thin-film AlGaInP lightemitting diodes (LEDs). The AZO thin film was not only used as current spreading layers but also as a seed layer of ZnO nanorods. The AZO thin film was prepared using atomic layer deposition. The ZnO nanorods improved light extraction, thus increasing the light output power of the LEDs. The output powers of LEDs with optimum ZnO nanorod structures were increased by 32% at an injection current of 700 mA, as compared with that of an LED with AZO thin film. The emission wavelength shifts of LEDs with an AZO thin film and optimum ZnO nanorod structure were 18 and 11 nm, respectively, when the injection current was increased from 20 to 1000 mA. The ZnO nanorods not only provide more light extraction but also keep the thermal stability of the LED device without any degradation. The results are promising for the developed high brightness AlGaInP LED applications with low fabrication cost through ZnO nanorods grown by hydrothermal method to enhance the light extraction efficiency.

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“…It is well known that the transparent conductive layer has well applied to optoelectronics for current spreading. The light output intensity and device stability of the light emitting diodes was improved by using transparent conductive layers, such as ITO and aluminum‐doped zinc‐oxide thin films . The ITO layer has been widely used in AlGaInP‐based LEDs and GaN‐base LEDs to enhance the current‐spreading effect.…”

Section: Introductionmentioning

confidence: 99%

Performance Comparisons of Light‐Emitting Thyristors with and without Indium Tin Oxide Transparent Conductive Layers

Chen

Tseng

Chen

et al. 2017

Physica Status Solidi (a)

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Indium tin oxide (ITO) deposited on different contact layers are studied to be used as transparent electrodes on light-emitting thyristors (LETs). The performance of LETs with either ITO or a metal electrode is compared. It is found that the ITO could be used as an ohmic contact layer, because the ITO layer was deposited on the contact layer with heavy dopant concentration. Moreover, the thermal annealing at 400 C is necessary. The S-shaped current-voltage characteristic of LETs with either metal or ITO electrodes is compared. The LETs with an ITO thin film exhibit excellent performance. The light output power and thermal stability of the LETs with the ITO layer are higher than those of the LETs with the metal electrode. The light-extraction efficiency of the ITO-LET is 24% higher than that of the metal-LET. The surface temperature of the ITO-LET is 9.57 C lower than that of the metal-LET. The ITO electrode on the LET chip significantly improved the light intensity distribution properties as compared with the metal electrode on the LET chip. The above results are promising for the development of ITO thin films to enhance the performance of LET applications.

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Performance comparison of p-side-up thin-film AlGaInP light emitting diodes with aluminum-doped zinc oxide and indium tin oxide transparent conductive layers

Cited by 10 publications

References 12 publications

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods

Performance Comparisons of Light‐Emitting Thyristors with and without Indium Tin Oxide Transparent Conductive Layers

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