Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Rhiger, David R.

doi:10.1007/s11664-011-1653-6

Cited by 103 publications

(45 citation statements)

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“…The unpassivated nBn detectors have a 50% cutoff wavelength of 13.2 lm, a dark current density of 5 Â 10 À4 A/cm 2 , and a dark current GR noise limited D* of 1 Â 10 10 cm Hz 1/2 /W at 77 K. Although the D* and QE (2.5%) are still lower than those of HgCdTe devices with similar cutoff wavelength, the measured device dark current density is below the Rule-07 proposed for HgCdTe photodetectors and is the lowest value reported so far for any T2SL at similar wavelengths. 21 These results indicate that higher operating temperature of type-II superlattice LWIR photodetectors can be demonstrated experimentally in the near future. FIG.…”

mentioning

confidence: 69%

“…16,17 But the device performance is still inferior to that of HgCdTe devices with similar cutoff wavelength in terms of D* and QE due to limited absorber thickness. 20,21 In summary, nBn long-wave infrared photodetectors based on InAs/InAs 0.62 Sb 0.38 type-II strained-layer superlattice have been demonstrated. The unpassivated nBn detectors have a 50% cutoff wavelength of 13.2 lm, a dark current density of 5 Â 10 À4 A/cm 2 , and a dark current GR noise limited D* of 1 Â 10 10 cm Hz 1/2 /W at 77 K. Although the D* and QE (2.5%) are still lower than those of HgCdTe devices with similar cutoff wavelength, the measured device dark current density is below the Rule-07 proposed for HgCdTe photodetectors and is the lowest value reported so far for any T2SL at similar wavelengths.…”

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confidence: 94%

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Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Kim

Cellek

Lin

et al. 2012

Applied Physics Letters

120

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confidence: 69%

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confidence: 94%

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Kim

Cellek

Lin

et al. 2012

Applied Physics Letters

120

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“…14) [46]. The nonbarrier dark currents are generally higher, with the best approaching "Rule 07" to within a factor of about 8.…”

Section: 40mentioning

confidence: 96%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

106

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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“…They overcome several problems inherent to traditional HgCdTe alloy detectors: specifically, (a) precision control of alloy composition, (b) non-uniformity over large areas and (c) large tunneling current [2]. The T2SLs are grown by molecular beam epitaxy (MBE).…”

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confidence: 99%

Atom-Probe Tomographic Study of Interfacial Intermixing and Segregation in InAs/GaSb Superlattices

Meng¹,

Kim²,

Isheim³

et al. 2013

Microsc Microanal

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Mid-infrared detectors based on type-II InAs/GaSb superlattices (T2SLs), first proposed in the 1980s, have drawn increasing interest recently [1]. They overcome several problems inherent to traditional HgCdTe alloy detectors: specifically, (a) precision control of alloy composition, (b) non-uniformity over large areas and (c) large tunneling current [2]. The T2SLs are grown by molecular beam epitaxy (MBE). During the growth of T2SLs, composition deviation from the design and interfacial intermixing still limits, however, the device performance [3]. Recent developments in the technology of ultraviolet (UV) picosecond laser assisted local-electrode atom-probe (LEAP) tomography have made atom-probe tomography (APT) an important instrument for atomic concentration profiling with sub-nm spatial resolution [4].Therefore, we performed APT analyses to characterize the individual elemental concentration profiles in T2SLs.We studied two InAs/GaSb superlattices grown by MBE on an AlSb capped GaSb substrate. Both T2SLs are based on alternating 7 GaSb monolayers (MLs) and 14 InAs MLs. InAs layers are compressively strained in the growth direction. Therefore, one of the two samples has an additional interfacial treatment, which consisted of depositing InSb at the InAs-on-GaSb interfaces to nullify the strain. No interfacial treatment was applied to the other sample. By comparing the two samples, we aim to understand how the interfacial treatment affects the concentration profiles and interface intermixing.The APT samples were prepared using a dual beam focused ion beam (FIB) microscope. The APT experiment was performed employing a Cameca LEAP 4000X Si at Northwestern University, at a base temperature of 25 K and under ultra-high vacuum (<8×10 -9 Pa). We utilized a focused UV picosecond laser to dissect the specimens on an atom-by-atom and atomic-plane by atomic-plane basis. To explore the influence of laser pulse energy on the accuracy of the APT results, we performed experiments with 5 pJ per pulse and 1.4 pJ per pulse laser pulse energy, at a 250 kHz pulse repetition rate. The 3D APT data was reconstructed employing flat epitaxial layers (a known structural feature) as a reference standard. Additionally, we performed a density correction and rescaled in the z-direction to compensate for the deviation caused by the different evaporation fields of InAs and GaSb. Figure 1(a) displays a 3D reconstruction of the atomic distribution of atoms in the InAs/GaSb superlattice with interfacial InSb layers. While the 3D atom map clearly resolves the superlattice, quantitative measurements were performed utilizing the concentration profiles of each of the elements (Figure 1(b-e)). The results demonstrate that the GaSb-on-InAs interface is 958

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Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Cited by 103 publications

References 50 publications

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Barrier infrared detectors

Atom-Probe Tomographic Study of Interfacial Intermixing and Segregation in InAs/GaSb Superlattices

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