Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Kim, H. S.; Cellek, O. O.; Lin, Ziliang; He, Zhao Yu; Zhao, Xin; Shi, Liyi; Li, H.; Zhang, Yong-Hang

doi:10.1063/1.4760260

Cited by 120 publications

(52 citation statements)

References 20 publications

(20 reference statements)

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“…It describes the dark-current behavior for a wide range of temperatures and wavelengths. Other barrier-type devices fabricated on the basis of III-V materials 4,16,[27][28][29][30] were also compared to the ''Rule 07''.…”

Section: Resultsmentioning

confidence: 99%

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Kopytko

Jóźwikowski

Martyniuk

et al. 2016

Journal of Elec Materi

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In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor/acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by ''Rule 07'' and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of longwavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

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Section: Resultsmentioning

confidence: 99%

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Kopytko

Jóźwikowski

Martyniuk

et al. 2016

Journal of Elec Materi

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“…and D e , D h are electron, hole diffusion lengths and diffusion constants, t e , t h and m e , m h are electron, hole diffusion lifetimes and mobilities respectively, n i is the intrinsic carrier concentration in the InAs/AlSb/GaSb SL given as n i ¼ 2½2pk=h 2 3=2 ðm e m h Þ 3=4 ExpðÀE g =2kTÞ, k is Boltzman's constant, T is the temperature, E g is the SL band gap energy and m e , m h are electron and hole effective masses. N D and N A are donor and acceptor concentrations in n and p side of the pn junction.…”

Section: Dark Current Modelmentioning

confidence: 99%

“…There have been a number of high performance type-II SL detector architectures reported up to date. These include nBn, pBp, XBn, CBIRD, pBIBn, W and M structures and Ga free InAs/InAsSb based type-II SL [1,2]. The details of the barrier detector structures are reviewed by Martyniuk et al [3].…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel

Hoştut

Elagöz

et al. 2016

Superlattices and Microstructures

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a b s t r a c tTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.

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“…[7][8][9] Similarly, in type II InAs/ GaSb superlattice (T2SL) IR photodetectors, majority carrier (hole) blocking layers have been implemented, 10 as well as electron blocking and hole blocking unipolar barriers in complementary barrier infrared detectors (CBIRD) 11 and p-type-intrinsic-n-type (PbIbN) photodiodes. 12 Furthermore, dark current suppressing structures were also demonstrated, such as conduction band barriers in nBn photodetectors 13,14 and XBn barrier photodetectors. 15 In general, the main goal in these architectures is to lower the dark current, but with a relatively small compromise to the photocurrent, thus achieving a significant improvement in the specific detectivity (D*).…”

mentioning

confidence: 99%

Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

Chauhan

Perera

et al. 2016

Applied Physics Letters

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We report the performance of a 30 period p-GaAs/Al x Ga 1Àx As heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2-6 lm wavelength range. Implementation of a current blocking barrier increases the specific detectivity (D*) under dark conditions by two orders of magnitude to $1.9 Â 10 11 Jones at 2.7 lm, at 77 K. Furthermore, at zero bias, the resistance-area product (R 0 A) attains a value of $7.2 Â 10 8 X cm 2 , a five orders enhancement due to the current blocking barrier, with the responsivity reduced by only a factor of $1.5. Published by AIP Publishing.[http://dx.doi.org/10.1063/1.4952431] Infrared (IR) detectors and imaging systems are becoming increasingly important in a diverse range of military and civilian applications. In recent years, significant attention has been paid to incorporating current blocking architectures into detector designs. For example, AlGaAs current blocking layers have been utilized in quantum dot IR photodetectors (QDIPs) both to enhance performance [1][2][3][4][5][6] and to achieve elevated operating temperatures. [7][8][9] Similarly, in type II InAs/ GaSb superlattice (T2SL) IR photodetectors, majority carrier (hole) blocking layers have been implemented, 10 as well as electron blocking and hole blocking unipolar barriers in complementary barrier infrared detectors (CBIRD) 11 and p-type-intrinsic-n-type (PbIbN) photodiodes. 12 Furthermore, dark current suppressing structures were also demonstrated, such as conduction band barriers in nBn photodetectors 13,14 and XBn barrier photodetectors. 15 In general, the main goal in these architectures is to lower the dark current, but with a relatively small compromise to the photocurrent, thus achieving a significant improvement in the specific detectivity (D*).Due to the mature growth and established processing technology of p-GaAs/Al x Ga 1Àx As, these materials systems have become increasingly attractive for demonstrating heterojunction interfacial workfunction IR photodetectors (HEIWIP), 16 which operate up to room temperature. 17 Furthermore, replacing the constant Al x Ga 1Àx As barrier with a graded barrier, achieved by tuning the Al mole fraction (x), was found to enable photovoltaic operation as well. 18 This is advantageous over photoconductive operation as it offers thermal noise limited performance and reduced power consumption. In this letter, we report the effect of a current blocking barrier (CBB) on a 30 period p-GaAs/Al x Ga 1Àx As IR detector with graded barriers, which shows a photoresponse at 77 K in the $2-6 lm range under photovoltaic operation. We observe an approximately five orders of magnitude higher resistance-area product (R 0 A) at zero bias, resulting in a two orders of magnitude improvement in D*, with the responsivity compromised only by a factor of $1.5 at zero bias, compared to performance without the CBB.A p-GaAs/Al x Ga 1Àx As heterojunction IR detector was grown on a semi-insulating GaAs substrate by molecular beam epitaxy 19 ( Fig. 1(a)). The active region of the ph...

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Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

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Cited by 120 publications

References 20 publications

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Effect of a current blocking barrier on a 2–6 μm p-GaAs/AlGaAs heterojunction infrared detector

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