Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs

Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

“…4 shows that the value of g m increases with gate bias and reaches a maximum value at around V gs = 0.5 V after which g m decreases. This reduction in g m is due to the degraded value of mobility in the channel region caused by the enhanced surface scattering at higher gate voltage [24].…”