Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

Ghosh, Sayani; Koley, Kalyan; Saha, Samar K.; Sarkar, Chandan Kumar

doi:10.1109/jeds.2015.2438026

Cited by 9 publications

(2 citation statements)

References 30 publications

(31 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of different heterostructure source materials in Gebody pTFETs prominently improves RF performances in terms of cut-off frequency (f T ) and maximum frequency of oscillation (f MAX ). f T being the frequency at unity current gain, is expressed as [31], [32] (10)…”

Section: B Rf Performancementioning

confidence: 99%

See 1 more Smart Citation

Heterostructure Ge-Body pTFETs for Analog/RF Applications

Ghosh

Koley

Saha

et al. 2020

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

This paper presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source. In order to study the figure-of-merits (FOMs) of analog and RF performances, various Ge-channel pTFETs are designed with Ge, GaAsP, SiGe, and InAlAs sources. The numerical simulation data show an improvement in the FOMs of analog performance such as drain current (I ds), transconductance (g m), transconductance-generation-factor (g m /I ds), and intrinsic gain (g m R o) of the devices with compound semiconductor source compared to Ge-source pTFET devices. Similarly, an improvement in the RF FOMs such as gate-to-source (C gs) and gate-to-drain (C gd) capacitances, maximum frequency of oscillation (f MAX), and cutoff frequency (f T) is observed for the devices with GaAsP, SiGe, and InAlAs source compared to Ge-source pTFETs. The simulation results also show that the common-source amplifiers, designed with Ge-heterostructure-pTFETs, exhibit a significant enhancement in gain and Gain-Bandwidth product of the circuit. INDEX TERMS Tunnel field-effect transistors, p-type germanium body, RF/analog performance, NQS effect, device simulation. I. INTRODUCTION S the CMOS technology scales down to its ultimate scaling limit of metal-oxide-semiconductor field-effect transistor (MOSFET) miniaturization, the power dissipation and chip area have become critical issues [1], [2]. Thus, in the current and next generation technology nodes, the energy efficient devices with low power, high speed, and high on chip

show abstract

Section: B Rf Performancementioning

confidence: 99%

“…The f MAX , which is the frequency at unity power gain, is given by [32] √ ⁄ From expression (10), we find that f T is determined by the ratio of g m and C gg (= C gs + C gd ). It is observed from Fig.…”

Section: B Rf Performancementioning

confidence: 99%