Performance comparison of 3-phase DC/AC converters using SiC MOSFETs or SiC BJTs

Laird, Ian; Jin, Bosen; McNeill, Neville; Yuan, Xibo

doi:10.1109/iecon.2017.8216237

Cited by 4 publications

(6 citation statements)

References 15 publications

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“…MOSFETs and SiC BJTs is given in Table I with a switching frequency of 60kHz, where their efficiencies are very close. Fig.15 shows the three-phase converter output voltage and currents at 4kW with SiC BJTs [46]. A performance comparison between SiC MOSFETs and SiC BJTs used in dc/dc converters can be found in [42] [47], which shows similar results.…”

Section: The Converter Efficiency Comparison Between Sicmentioning

confidence: 69%

“…In order to investigate the switching loss generation mechanism (especially during turn-on) and further break down the losses, the turn-on and turn-off energies are calculated based on tests with a SiC-MOSFET half-bridge converter circuit. Given the large current overshoot (ringing) during the turn-on transition, the turn-on energy due to the overshoot is calculated separately to that generated by the overlap between the base voltage and current as illustrated in Fig.20 [46]. Fig.21 shows the switching energy at various current levels, where the switching energy has been broken-down into its turn-off energy (blue), turn-on energy base (cyan) and turnon energy due to the current overshoot/ringing (yellow).…”

Section: A Current Overshoot Ringing Emi and Switching Lossmentioning

confidence: 99%

“…Although there are challenges as mentioned above, with skilled design, very fast switching can be achieved successfully with minimum external gate resistance. For example, [46] has demonstrated switching waveforms of SiC MOSFETs tested with zero (no) external gate resistance. The switching transient can be completed within around 30ns.…”

Section: B Cross-talk Effect and Gate Driver Circuitmentioning

confidence: 99%

“…From the circuit design point of view, the parasitic inductance in the communtation loop must be minimized. As mentioned, [46] has demonstrated a circuit design which can achieve very fast switching of SiC MOSFETs (<30ns) with no external gate resistance.…”

Section: Potential Solutions For High Frequency Sic Convertersmentioning

confidence: 99%

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Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

Self Cite

101

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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Section: The Converter Efficiency Comparison Between Sicmentioning

confidence: 69%

Section: A Current Overshoot Ringing Emi and Switching Lossmentioning

confidence: 99%

Section: B Cross-talk Effect and Gate Driver Circuitmentioning

confidence: 99%

Section: Potential Solutions For High Frequency Sic Convertersmentioning

confidence: 99%

See 2 more Smart Citations

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

Self Cite

101

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“…Fig. 15 shows switching energy for turn-ON and turn-OFF plotted against the device current when operating at a supply voltage of 600 V [29]. Using the CT driver will reduce the turn-ON loss due to the reduction of current overshoot but slightly increase the turn-OFF loss due to the voltage overshoot.…”

Section: Evaluation Of the Off-state Negative Base-emitter Voltage Requirement Of The Sic Bjtmentioning

confidence: 99%

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

McNeill

Jin

Yuan

et al. 2020

IEEE Trans. Ind. Electron.

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A strong candidate device for use in highefficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its ON-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative OFF-state base-emitter voltage is presented in this article. The OFF-state baseemitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a threephase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The OFF-state baseemitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.

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Analysing the Crosstalk Effect of SiC MOSFETs in Half-Bridge Arrangements

Laird

Yuan

2019

2019 IEEE Energy Conversion Congress and Exposition (ECCE)

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Performance comparison of 3-phase DC/AC converters using SiC MOSFETs or SiC BJTs

Cited by 4 publications

References 15 publications

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

Analysing the Crosstalk Effect of SiC MOSFETs in Half-Bridge Arrangements

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