Performance Assessment of Amorphous HfO₂-Based RRAM Devices for Neuromorphic Applications

Abstract

The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior.

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

“…Many works present excellent analogue switching performance in D.C. mode without 95,98,99,121 or with 94,96,97,100,101,109,114,116 the help of compliance current, as shown in Fig. 5l.…”

“…In 2008 the memristor predicted by Chua was first confirmed and built. 83 A valence-change memristor is typically made up of a sub-stoichiometric transition metal oxide (e.g., HfO x , 85,[93][94][95][96][97][98][99][100][101][102][103][104][105][106][107][108][109][110][111][112] TaO x , 74,104,107,113,114 TiO x , 114,115 AlO x , 97,100,101,104,106,116 NiO x , 117 etc.) and requires an electroforming step to create a filamentary conducting path, comprising oxygen vacancy defects, within the oxide network with the electrodes typically non-active metals.…”

“…Dittmann et al reviewed the VCM mechanism in detail 120 where the engaged audience should refer to. Many works present excellent analogue switching performance in D.C. mode without 95,98,99,121 or with 94,96,97,100,101,109,114,116 the help of compliance current, as shown in Fig. 5l.…”

Review of electrical stimulus methods ofin situtransmission electron microscope to study resistive random access memory

“…[4][5][6][7][8][9][10][11][12] The merits mentioned above make a RRAM device a competitive candidate for the simulation of neuromorphic synapses and the application in non-volatile memory technology. 13,14 A RRAM device consists of two electrodes and a dielectric sandwiched between them, which changes its working state by changing the applied electrical stimulus. The most important thing in studying RRAM is to master the process of resistive transition.…”

“…4–12 The merits mentioned above make a RRAM device a competitive candidate for the simulation of neuromorphic synapses and the application in non-volatile memory technology. 13,14…”