Performance and Reliability Issues of SiC-Schottky Diodes

Rupp, Roland; Treu, Michael; Mauder, A.; Griebl, E.; Werner, W.; Bartsch, W.; Stephani, D.

doi:10.4028/www.scientific.net/msf.338-342.1167

Cited by 36 publications

(15 citation statements)

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“…1,2 Through recent progress in growth and device processing technology of SiC, high-voltage 4H-SiC Schottky barrier diodes and vertical junction field-effect transistors have been developed. 3,4 To realize SiC power devices with blocking voltage higher than several kilovolts for very high-voltage applications such as electric power transmission, bipolar devices, such as PiN diodes and thyristors, possess great promise in terms of lower on-resistances owing to the effect of conductivity modulation. 5,6 Solid state transformers based on 15 kV SiC insulated gate bipolar transistors and 15 kV SiC PiN diodes have been proposed as an attractive application.…”

Section: Impacts Of Recombination At the Surface And In The Substratementioning

confidence: 99%

Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers

Kimoto

Hiyoshi

Hayashi

et al. 2010

Journal of Applied Physics

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After remarkable reduction in the Z1/2 center in n-type 4H–SiC epilayers, the measured carrier lifetimes can be severely affected by other recombination paths. Impacts of carrier recombination at the surface as well as in the substrate are investigated in detail by using numerical simulation based on a diffusion equation. The simulation reveals that a very thick (>100 μm) epilayer is required for accurate measurement of carrier lifetimes if the bulk lifetime in the epilayer is longer than several microsecond, due to the extremely short lifetimes in the substrate. The fast decay often observed at the initial stage of decay curves can be explained by fast recombination at the surface and in the substrate. In experiments, the carrier lifetime is improved from 0.69 to 9.5 μs by reducing the Z1/2 center via two-step thermal treatment (thermal oxidation and Ar annealing) for a 148-μm-thick n-type epilayer. This lifetime must be still, to large extent, affected by the recombination at the surface and in the substrate, and the real bulk lifetime may be much longer. The carrier recombination paths and their impacts on the decay curves are discussed.

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Section: Impacts Of Recombination At the Surface And In The Substratementioning

confidence: 99%

Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers

Kimoto

Hiyoshi

Hayashi

et al. 2010

Journal of Applied Physics

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“…The results shown here agree, as Schottky diodes shielded only by implanted (low dose) boron termination exhibit significantly reduced pulsed blocking performance (<50% of dc) while co-fabricated JBS and pin rectifiers (with high dose aluminum and boron implanted barriers) do not begin to show measurable leakage until pulse voltages exceed 1kV. While the type of termination scheme used in the commercial devices it is not documented, aluminum implanted JTE has been reported in earlier work (6). Similar studies on 6H-SiC Schottky diodes fabricated with implanted aluminum JTE have showed an increase in blocking performance under similar pulsed conditions in the past (7).…”

Section: Resultssupporting

confidence: 84%

Degraded Blocking Performance of 4H-SiC Rectifiers under High dV/dt Conditions

Losee

Zhu

Chow

et al.

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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We present our pulsed blocking measurements of cofabricated 4H-SiC Schottky, Junction Barrier Schottky (JBS), and pin diodes. Schottky diodes fail at pulsed voltages noticeably lower than their static values, while the pulsed leakage currents of JBS and pin diodes (along with commercial SiC rectifiers) remain below our measurable limits until the reverse voltage approaches the static breakdown. From experimental results and numerical simulations, the premature breakdown of the diodes is attributed to the slow response of deep levels associated with dopant implantation, which can leave high field points such as the edge of contacts unprotected under high dV/dt blocking conditions.

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“…Through recent progress in growth and device processing technology of SiC, highvoltage 4H-SiC Schottky barrier diodes and vertical junction field-effect transistors have been developed [3,4]. To realize SiC power devices with a blocking voltage higher than several kilovolts for very high-voltage applications such as electric power transmission, bipolar devices possess great promise in terms of lower on-resistance owing to the effect of conductivity modulation [5,6].…”

mentioning

confidence: 99%