2004
DOI: 10.1109/tdmr.2004.837209
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Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)

Abstract: In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.

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Cited by 87 publications
(49 citation statements)
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“…Recently, however, the NAND Flash memory industry has faced the scaling limitation of the conventional floating gate (FG) NAND cell. For a promising solution as the alternative technology to replace FG flash memory, the charge trap type flash memory, like Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been focused since it provides simpler process steps than FG [3], lower cell-to-cell coupling [4], and virtual immunity to stress-induced leakage current (SILC) [5].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, however, the NAND Flash memory industry has faced the scaling limitation of the conventional floating gate (FG) NAND cell. For a promising solution as the alternative technology to replace FG flash memory, the charge trap type flash memory, like Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) device has been focused since it provides simpler process steps than FG [3], lower cell-to-cell coupling [4], and virtual immunity to stress-induced leakage current (SILC) [5].…”
Section: Introductionmentioning
confidence: 99%
“…Optically active multilayer stacks consisting of silicon nanodots embedded in alumina were processed at temperatures below 325 °C. The investigated low temperature multilayer stacks (Al/TiN/Al 2 O 3 /Si-ND/SiO 2 and Al 2 O 3 /Si-ND/.. /Si-ND/Al 2 O 3 ) have a potential to be used in 3-D integrated memories [37,38,58] and photonic devices [59,60] (discussed in more detail in Chapter 5). …”
Section: Discussionmentioning
confidence: 99%
“…Due to their high applicability in 3-D memory chip integration, nanodots deposition techniques gain a lot of attention in today's research [37,38].…”
Section: Memory Cell Multilayer Structurementioning
confidence: 99%
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