Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

Ture, Erdin; Brückner, Peter; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank

doi:10.1109/eumic.2015.7345077

Cited by 10 publications

(5 citation statements)

References 8 publications

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“…Compared to planar HEMTs, the influences of trigate C GS were also discovered to be more predominant than the ones of C GD with higher ratios between on-state and off-state capacitances. In addition, the influence of trigate channels on C DS is not critical, whereas the g ds strongly depends on the L Fin with a declining trend [154].…”

Section: Lateral Rf Finfets and Trigate Hemtsmentioning

confidence: 95%

“…Several groups [140,152,154] subsequently used smallsignal equivalent circuit modeling to understand the RF performance of GaN trigate/FinFET devices. Gate parasitics extracted at high V DS suggest that increasing V G has minimal effect on C GS of planar FETs, leading to a continuous decreasing trend of f T with a high slope.…”

Section: Lateral Rf Finfets and Trigate Hemtsmentioning

confidence: 99%

See 1 more Smart Citation

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense applications, their performance is still far from the intrinsic GaN limit. In the last few years, the fin field-effect transistor (FinFET) and trigate architectures have been leveraged to develop a new generation of GaN power and RF devices, which have continuously advanced the state-of-the-art in the area of microwave and power electronics. Very different from Si digital FinFET devices, GaN FinFETs have allowed for numerous structural innovations based on engineering the two-dimensional-electron gas or p–n junctions, in both lateral and vertical architectures. The superior gate controllability in these fin-based GaN devices has not only allowed higher current on/off ratio, steeper threshold swing, and suppression of short-channel effects, but also enhancement-mode operation, on-resistance reduction, current collapse alleviation, linearity improvement, higher operating frequency, and enhanced thermal management. Several GaN FinFET and trigate device technologies are close to commercialization. This review paper presents a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provides in-depth analyses correlating device design parameters to device performance space. The paper concludes with a summary of current challenges and exciting research opportunities in this very dynamic research field.

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Section: Lateral Rf Finfets and Trigate Hemtsmentioning

confidence: 95%

Section: Lateral Rf Finfets and Trigate Hemtsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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“…A recent study by Lee et al [15] has already shown that by adopting the Tri-gate topology, a more linear f T response can be achieved with respect to the varied gate bias voltage. It has been demonstrated in our previous study [18] that flatter Tri-gate f T can be also maintained throughout higher gate and drain bias voltages thanks to the reduced SCE and on-state gate capacitance lowering (relatively sharp reductions in intrinsic C gs with respect to increased gateand drain bias voltage). As seen in the intrinsic f T profiles extracted from the S-parameter measurements of the planar FETs in Fig.…”

Section: B Inalgan Tri-gate Hemtsmentioning

confidence: 88%

“…This is due to the adopted total gate width normalization with respect to the effective nano-channel widths, which neglects the parasitic effects. A more detailed analysis on the f T and parasitics of the Tri-gate devices has already been investigated in a previous study [18].…”

Section: B Inalgan Tri-gate Hemtsmentioning

confidence: 98%

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Ture

Brückner

Godejohann

et al. 2016

IEEE J. Electron Devices Soc.

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Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors are highly-scaled having 100 nm of gate length, which introduces the condition of a short channel. It is demonstrated that higher sub-threshold slopes, reduced drain-induced barrier lowering and better overall off-state performances have been achieved by the nano-channel tri-gate HEMTs with an AlGaN barrier. A lattice-matched InAlGaN barrier with the help of the fin-shaped nano-channels provide improved gate control, increasing current densities, and transconductance g m . In a direct comparison, very high drain current densities (∼3.8 A/mm) and g m (∼550 mS/mm) have further been obtained by employing a pure AlN barrier.INDEX TERMS High-electron mobility transistor (HEMT), fin-shaped field-effect transistor (FinFET), Gallium nitride, short channel.

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“…Owing to its three-dimensional (3D) configuration, both top and sidewalls simultaneously deplete the gate region and therefore, better controllability is achieved compare to the planar HEMT. Indeed, recent studies have successfully fabricated E-mode FinFETs with fin widths below 100 nm [21][22][23][24]. This method is also preferred in applications where both E-and D-mode devices are on the same chip, as this can be achieved by adding a few fabrication steps compared to other normally-off HEMT methods.…”

Section: Introductionmentioning

confidence: 99%

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Yilmaz¹,

Odabasi²,

Salkim³

et al. 2022

Semicond. Sci. Technol.

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In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the normally-off performance of the FinFET intact, an ultrathin aluminium-oxide/sapphire (Al2O3) gate dielectric is proposed (in a basic single-finger 0.125 mm device). Later, the DC and radio frequency (RF) performances of the proposed FinFET designs (with optimized fin width and Al2O3 thickness) are compared with that of conventional planar HEMT. DC and RF measurements are performed using power transistors in 10-fingers configuration, with a total gate periphery of 2.5 mm. The effect of Fin structure and Al2O3 thickness on the electrical performance of HEMTs, including threshold voltage (Vth) shift, transconductance (gm) linearity, small-signal gain, cut off frequency (ft), output power (Pout), and power-added efficiency (PAE) are investigated. Based on our findings, FinFET configuration imposes normally-off functionality with a Vth= 0.2 V, while the planar architecture has a Vth= -3.7 V. Originating from passivation property of the alumina layer, the FinFET design exhibits two orders of magnitude smaller drain and gate leakage currents compared to the planar case. Moreover, large signal RF measurements reveals an improved Pout density by over 50% compared to planar device, attributed to reduced thermal resistance in FinFETs stemming from additional lateral heat spreading of sidewall gates. Owing to its superior DC and RF performance, the proposed FinFET design with ultrathin gate dielectric could bear the potential of reliable operating for microwave power applications, by further scaling of the gate length.

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Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design

Cited by 10 publications

References 8 publications

GaN FinFETs and trigate devices for power and RF applications: review and perspective

GaN FinFETs and trigate devices for power and RF applications: review and perspective

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

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