Abstract:The performance and characteristics of Double Gate MOSFET with high dielectric constant (high-κ) gate stack have been analyzed and compared with those of conventional pure SiO2gate MOSFET. Quantum Ballistic Transport Model has been used to demonstrate the performance of the device in terms of threshold voltage, drain current in both low and high drain voltage regions and subthreshold swing. The effect of temperature on the threshold voltage and subthreshold characteristics has also been observed. This work rev… Show more
“…Association 2009). DG MOSFETs have better control over short channel effects (SCE), threshold voltage roll-off, drain induced barrier lowering (DIBL) and reduced subthreshold swing than SG MOSFETs (Farzana et al 2012;Ashraf et al 2009). With decrease in device dimensions, certain quantum mechanical effects modify device characteristics significantly.…”
Wave function penetration has significant impact on nanoscale devices having ultrathin gate oxide. Although wave function penetration effects on ballistic drain current and capacitance-voltage characteristics in nanoscale devices have been reported in literature, to the best of the authors' knowledge, effects of temperature on drain current incorporating with and without wave function penetration are yet to be studied. In this work, the impacts of temperature, gate dielectric and film thickness in wave function penetration on ballistic drain current of nanoscale double-gate (DG) MOSFETs are presented. The effects are observed using two-dimensional self-consistent solution of Schrödinger and Poisson equations. It has been obtained that temperature effect on drain current is greatly dependent on silicon surface orientation. Drain current of DG MOS-FETs fabricated on h110i surface is more sensitive to temperature compared to h001i surface. This has been obtained for both the cases with and without incorporating wave function penetration in silicon-gate oxide interface. Electrostatics behind this phenomenon has been explained from the transmission probability of electrons from source to drain which is largely influenced by temperature on h110i surface compared to h001i: Moreover, the transmission coefficient is significantly affected by wave function penetration in h110i than h001i surface. Both these demonstrate greater sensitivity of temperature and wave function penetration in h110i silicon surface orientation compared to h001i: Furthermore, gate dielectric with lower conduction band offset and device scaling with thin channel thickness tend to exhibit greater impact of wave function penetration.
“…Association 2009). DG MOSFETs have better control over short channel effects (SCE), threshold voltage roll-off, drain induced barrier lowering (DIBL) and reduced subthreshold swing than SG MOSFETs (Farzana et al 2012;Ashraf et al 2009). With decrease in device dimensions, certain quantum mechanical effects modify device characteristics significantly.…”
Wave function penetration has significant impact on nanoscale devices having ultrathin gate oxide. Although wave function penetration effects on ballistic drain current and capacitance-voltage characteristics in nanoscale devices have been reported in literature, to the best of the authors' knowledge, effects of temperature on drain current incorporating with and without wave function penetration are yet to be studied. In this work, the impacts of temperature, gate dielectric and film thickness in wave function penetration on ballistic drain current of nanoscale double-gate (DG) MOSFETs are presented. The effects are observed using two-dimensional self-consistent solution of Schrödinger and Poisson equations. It has been obtained that temperature effect on drain current is greatly dependent on silicon surface orientation. Drain current of DG MOS-FETs fabricated on h110i surface is more sensitive to temperature compared to h001i surface. This has been obtained for both the cases with and without incorporating wave function penetration in silicon-gate oxide interface. Electrostatics behind this phenomenon has been explained from the transmission probability of electrons from source to drain which is largely influenced by temperature on h110i surface compared to h001i: Moreover, the transmission coefficient is significantly affected by wave function penetration in h110i than h001i surface. Both these demonstrate greater sensitivity of temperature and wave function penetration in h110i silicon surface orientation compared to h001i: Furthermore, gate dielectric with lower conduction band offset and device scaling with thin channel thickness tend to exhibit greater impact of wave function penetration.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.