Performance Analysis of Double Gate Junctionless Tunnel Field Effect Transistor: RF Stability Perspective

Abstract

This paper investigates the RF Stability performance of the Double Gate Junctionless Tunnel Field Effect Transistor (DGJL-TFET). The impact of the geometrical parameter, material and bias conditions on the key figure of merit (FoM) like Transconductance (g m ), Gate capacitance (C gg ) and RF parameters like Stern Stability Factor (K), Critical Frequency (f k ) are investigated. The analytical model provides the relation between f k and small signal parameters which provide guidelines for optimizing the device parameter. The results show improvement in ON current, g m , f t and f k for the optimized device structure. The optimized device parameters provide guidelines to operate DGJL-TFET for RF applications.

Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor

“…Its unique operation is based on the principle characteristics of field-effect modulation, distinct from the bipolar junction transistor (BJT) and which relies on control the on current (2). This fundamental difference gives the MOSFET several advantages, including lower power consumption, fast switching speeds, and scalability for integration into densely packed semiconductor chips (3).…”