Performance Analysis of CNTFET-ReRAM based Crossbar Network for In-Memory Computing

Syed, Huma; Khanday, Farooq Ahmad; Zahoor, Furqan; Hussin, Fawnizu Azmadi

doi:10.1109/rteict52294.2021.9573900

Cited by 1 publication

(1 citation statement)

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“…The intrinsic physical phenomenon behind RRAMs is resistive switching (RS), which means that the device can be freely programmed into a high-resistance state (HRS, or OFF state) or a low-resistance state (LRS, or ON state) under external electrical stimuli. The conventional memory storage devices store data in binary form "0" and "1", where "0" represents the data that are not stored and "1" represents the stored data [40,41]. RRAM devices utilize redox reactions ( oxidation and reduction ) for effective data storage wherein redox reactions form a conducting filament (CF) between the two metal electrodes, within the insulator.…”

Section: Rram Design and Physical Mechanismmentioning

confidence: 99%

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

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Section: Rram Design and Physical Mechanismmentioning

confidence: 99%