Perforated serpentine membrane with AlN as dielectric material shunt capacitive RF MEMS switch fabrication and characterization

Thalluri, Lakshmi Narayana; Guha, Koushik; Rao, K. Srinivasa; Prasad, G.; Sravani, K. Girija; Sastry, K.S.R.; Kanakala, Appala Raju; Babu, P. Bose

doi:10.1007/s00542-020-04755-3

Cited by 25 publications

(8 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, considering the usual values for each parameter, we achieve V pull-in ≈ V max admissible , with the consequence that the obtained V max admissible is compatible with the experimental setups known in the literature. Particularly, Table 3, after fixing the geometry of the device and varying the material constituting the deformable plate as in [49], reports the values of V max admissible achieved which result similar to those obtained in [49]. As already highlighted, the effects due to the fringing field depend on the aspect ratio L/d.…”

Section: Concerning the Pull-in Voltage And Electrostatic Pressuresupporting

confidence: 65%

“…which is completely analogous to (11) achieved in [45]. In addition, (74) is still analogous to (3) in [49] where a MEMS switch with perforated serpentine (Au) was designed, sim-ulated, fabricated and characterized. Not last, (74) is quite similar to (1) in [48] where an electrostatic MEMS with parallel plates was considered.…”

Section: Concerning the Pull-in Voltage And Electrostatic Pressurementioning

confidence: 63%

See 1 more Smart Citation

Finite Differences for Recovering the Plate Profile in Electrostatic MEMS with Fringing Field

et al. 2022

View full text Add to dashboard Cite

Global existence and uniqueness conditions for a dimensionless fourth-order integro-differential model for an electrostatic-elastic MEMS device with parallel plates and fringing field contribution were recently achieved by the Authors. Moving from this work, once the dielectric profile of the deformable plate according with experimental setups has been assigned, some technical conditions of applicability for the intended use of the device as well as the mechanical tension of the deformable plate are presented and discussed. Then, highlighting the link between the fringing field and the electrostatic force, finite differences were exploited for recovering the deformable plate profile according both global existence and uniqueness conditions. Moreover, the influence of the electro-mechanical properties of the deformable plate on both the numerical approach and on the intended uses of the device is discussed, comparing the results with experimental setups regarding pull-in voltage and electrostatic pressure.

show abstract

Section: Concerning the Pull-in Voltage And Electrostatic Pressuresupporting

confidence: 65%

Section: Concerning the Pull-in Voltage And Electrostatic Pressurementioning

confidence: 63%

Finite Differences for Recovering the Plate Profile in Electrostatic MEMS with Fringing Field

et al. 2022

View full text Add to dashboard Cite

show abstract

“…However, whatever the material selected, we obtain V max-admissible values very close to the pull-in values. It follows that the V max-admissible obtained is compatible with the experimental set-ups known in the literature (Thalluri, 2020). Table 4 shows some examples of V max-admissible obtained by simulating the experimental device studied in Thalluri (2020) and also selecting different materials to make the covering film of the dielectric material.…”

Section: Galerkin-fem Approachsupporting

confidence: 72%

Galerkin-FEM approach for dynamic recovering of the plate profile in electrostatic MEMS with fringing field

Versaci,

Angiulli,

Fattorusso

et al. 2024

COMPEL

View full text Add to dashboard Cite

Purpose Based on previous results of the existence, uniqueness, and regularity conditions for a continuous dynamic model for a parallel-plate electrostatic micro-electron-mechanical-systems with the fringing field, the purpose of this paper concerns a Galerkin-FEM procedure for deformable element deflection recovery. The deflection profiles are reconstructed by assigning the dielectric properties of the moving element. Furthermore, the device’s use conditions and the deformable element’s mechanical stresses are presented and discussed. Design/methodology/approach The Galerkin-FEM approach is based on weighted residuals, where the integrals appearing in the solution equation have been solved using the Crank–Nicolson algorithm. Findings Based on the connection between the fringing field and the electrostatic force, the proposed approach reconstructs the deflection of the deformable element, satisfying the conditions of existence, uniqueness and regularity. The influence of the electromechanical properties of the deformable plate on the method has also been considered and evaluated. Research limitations/implications The developed analytical model focused on a rectangular geometry. Practical implications The device studied is suitable for industrial and biomedical applications. Originality/value This paper proposed numerical approach characterized by low CPU time enables the creation of virtual prototypes that can be analyzed with significant cost reduction and increased productivity.

show abstract

“…The basic parameters for designing RF MEMS switch are capacitance, pullin voltage and switching time [17]. Among them, modelling of capacitance in the switch is primary assignment to evaluate performance of switch [18] A. Capacitance Modelling for Proposed switch…”

Section: Modelling Of Proposed Switchmentioning

confidence: 99%

Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch

Rao

Kumar

Sravani

2023

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

This paper presents an approach to evaluate capacitance developed by perforated membrane of RF MEMS switch with high accuracy. An analytical model is developed for both upstate and downstate of switch by including parasitic and fringing field capacitance in parallel plate capacitance model. The proposed analytical model includes the ligament efficiency term directly in the formula which reduce the efforts to calculate it individually for various perforation sizes. The capacitance analysis has been carried out by varying the physical parameters to optimize the switch dimensions and these analytical results are compared with the simulation results carried out by 3D FEM tool COMSOL multiphysics for validation. The proposed analytical model results are then compared with benchmark models to understand the efficiency of proposed model in estimating the up and downstate capacitances. The proposed analytical model proved to be good with less error percentage of 2.13% at upstate and 2.59% at downstate whereas the other benchmark models gives greater than 5% error. The switch is then fabricated using 4mask surface micromachining process and experimental evaluation of capacitance at both upstate and downstate is carried out by DC probe station. Experimentally, the upstate capacitance is obtained as 37.4 fF and downstate as 2.43 pF and the analytical models exhibited low error percentage of 3.95% at upstate and 2.05% at downstate condition for µ=0.5.

show abstract

Perforated serpentine membrane with AlN as dielectric material shunt capacitive RF MEMS switch fabrication and characterization

Cited by 25 publications

References 43 publications

Finite Differences for Recovering the Plate Profile in Electrostatic MEMS with Fringing Field

Finite Differences for Recovering the Plate Profile in Electrostatic MEMS with Fringing Field

Galerkin-FEM approach for dynamic recovering of the plate profile in electrostatic MEMS with fringing field

Modelling, Fabrication and Testing of RF Micro-Electro-Mechanical-Systems Switch

Contact Info

Product

Resources

About