Pentacene-based radio-frequency identification circuitry

Baude, P. F.; Ender, D. A.; Haase, M. A.; Kelley, Tommie W.; Muyres, Dawn V.; Theiss, Steven D.

doi:10.1063/1.1579554

Cited by 754 publications

(439 citation statements)

References 19 publications

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“…Examples include organic integrated circuits 1 for flexible displays 2 and radio-frequency identification tags. 3 Unfortunately, the vast majority of reported OFETs incorporating polymeric or inorganic gate insulators require high operating voltages. Paramount to the successful implementation of OFET technology in future device applications will be low-voltage operation.…”

Section: Low-voltage Organic Transistors Based On Solution Processed mentioning

confidence: 99%

Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Wöbkenberg

Ball

Kooistra

et al. 2008

Applied Physics Letters

114

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Low-voltage organic transistors based on solution processed semiconductors and selfassembled monolayer gate dielectrics Woebkenberg, Paul H.; Ball, James; Kooistra, Floris B.; Hummelen, Jan C.; de Leeuw, Dago M.; Bradley, Donal D. C.; Anthopoulos, Thomas D. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm 2 / V s and threshold voltages ഛ0.35 V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.

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Section: Low-voltage Organic Transistors Based On Solution Processed mentioning

confidence: 99%

Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Wöbkenberg

Ball

Kooistra

et al. 2008

Applied Physics Letters

114

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“…Much attention has focussed on realizing electrically and environmentally stable OTFTs required to successfully implement complex systems such as radio frequency identification (RFID) tags 10,[13][14][15][16] . An avenue that has received far less attention, despite carrying tremendous promise, is the "controllable" manipulation of the transistor functionality beyond that of a switch or amplifier.…”

mentioning

confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

115

121

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Citation for published item:furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVF Further information on publisher's website:httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQH Publisher's copyright statement: his is the epted version of the following rti leX furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVD whi h h s een pu lished in (n l form t httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQHF his rti le m y e used for nonE ommer i l purposes in ord n e ith ileyE gr erms nd gonditions for selfE r hivingFAdditional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we report on a novel concept of an electrically programmable selfassembled molecular gate dielectric layer for OTFTs (see figure 1a) that can be reversibly charged and discharged and retains these digital states even when the supply voltage is removed. Due to the small thickness of the dielectric stack (app. 5.7 nm), the memory transistors operate with very small program and erase voltages of ± 2 V. Despite the extremely small dielectric thickness, the retention time is already promising (~6 hours with a read voltage of -750 mV applied continuously). The dielectric is a mixed monolayer of aliphatic and C 60 -functionalized phosphonic acid molecules (app. 2.1 nm thickness) on a patterned and plasma-oxidized aluminum gate electrode on a glass substrate. The aluminum oxide (AlO x ) contributes with a thickness of 3.6 nm to the dielectric layer stack 6 . As the aliphatic component, n-octadecylphosphonic acid 1 was chosen, which has already shown excellent insulating characteristics as the gate dielectric 6 . As the charge storage component, the C 60 -derivative 2 was synthesized to take advantage of the strong acceptor properties and reversible redox behavior of C 60 (Figure 1b and Supplementary Information SI-1) and of the self-assembly properties induced by the C 18 -aliphatic tail with phosphonic acid anchor group.Mixed self-assembled monolayers of 1 and 2 were created by a simple "one pot" solution content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices

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“…T ransparent organic semiconductors with high chargecarrier mobilities have been an important research target due to their broad applications in flat-panel displays 1,2 , radio-frequency identification tags 3,4 , complementary integrated circuits [5][6][7] and biological and medical applications [8][9][10][11][12][13] . The carrier mobility of organic semiconductor films is strongly influenced by the crystallinity, molecular packing structures of the organic thin films and charge traps at the gate dielectric/ semiconductor interface [14][15][16][17] .…”

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confidence: 99%

Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

et al. 2014

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Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel offcentre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm 2 Vs À 1 (25 cm 2 Vs À 1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of 490% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

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Pentacene-based radio-frequency identification circuitry

Cited by 754 publications

References 19 publications

Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

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