PEI N-doped graphene quantum dots/p-type silicon Schottky diode

Berktaş, Zeynep; Yıldız, Mustafa; Seven, Elanur; Orhan, Elif; Altındal, Ş.

doi:10.1016/j.flatc.2022.100436

Cited by 11 publications

(25 citation statements)

References 44 publications

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“…Citric acid (CA) was used as a source of carbon. N-doped PEI-GQDs were synthesized in an autoclave aqueous medium via the hydrothermal reaction of CA and PEI . The steps of the synthesis of nitrogen-doped PEI-functionalized GQDs were given in our previous work …”

Section: Experimental Methodsmentioning

confidence: 99%

“…N-doped PEI-GQDs were synthesized in an autoclave aqueous medium via the hydrothermal reaction of CA and PEI. 50 The steps of the synthesis of nitrogen-doped PEI-functionalized GQDs were given in our previous work. 50 Infrared absorption spectra of GQDs were obtained from a PerkinElmer BX II Fourier Transform Infrared (FT-IR) Spectrometer in KBr discs and were reported in cm −1 units.…”

Section: Synthesis and Characterization Of Nitrogen-doped Pei-functio...mentioning

confidence: 99%

“…50 The steps of the synthesis of nitrogen-doped PEI-functionalized GQDs were given in our previous work. 50 Infrared absorption spectra of GQDs were obtained from a PerkinElmer BX II Fourier Transform Infrared (FT-IR) Spectrometer in KBr discs and were reported in cm −1 units. PEI-functionalized Ndoped GQDs were morphologically characterized by transmission electron microscopy (TEM) (FEI Technai G2 STwin) at an accelerating voltage of 200 kV.…”

Section: Synthesis and Characterization Of Nitrogen-doped Pei-functio...mentioning

confidence: 99%

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Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure

Berktaş

Orhan

Ulusoy

et al. 2023

ACS Appl. Electron. Mater.

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Graphene quantum dots (GQDs), zero-dimensional members of the carbon family, have exceptional mechanical, thermal, and electrical properties. Nevertheless, pure GQDs have many challenges in reaching their full potential in electronic applications. Functionalizing or chemical modification of GQDs adjusts the physical and chemical properties, driving GQDs toward high-performance device applications. Nitrogen (N)-doped polyethylenimine (PEI) functionalized GQDs are capturing the interest of researchers specifically for electronic and photovoltaic applications these days. In this context, we present for the first time capacitance/conductance−voltage (C−V and G/ω−V) measurements of the nitrogen-doped PEI-functionalized GQDs-based structure for use in electronic applications in the frequency range from 1 kHz to 2 MHz at 300 K in this study. Capacitance features, the energy density distribution of surface states (N ss ), and the relaxation time (τ) of a nitrogen-doped PEI-functionalized GQDs-based structure have been examined by using the admittance/conductance method. Negative capacitance (NC) behavior mostly exhibited by ferroelectric materials has been observed in the GQDs-based structure at low frequencies, and then it starts to disappear. NC is usually attributed to various surface states/interface traps, series resistance (R s ), and minority carrier injection. The NC phenomenon indicates that an increase in voltage gives rise to a decrease in the charge on the electrodes. The control of interfacial charges in such a heterostructure will be critical for NC devices. The results provide a basis for insights into semiconductor device technology.

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Synthesis and Characterization Of Nitrogen-doped Pei-functio...mentioning

confidence: 99%

Section: Synthesis and Characterization Of Nitrogen-doped Pei-functio...mentioning

confidence: 99%

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Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure

Berktaş

Orhan

Ulusoy

et al. 2023

ACS Appl. Electron. Mater.

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“…Details of the synthesis of N‐doped GQDs functionalized with PEI are included in our previous works. [ 35,36 ] The structure of the diode is shown in schematic form in Figure .…”

Section: Methodsmentioning

confidence: 99%

“…In our previous studies, [ 35,36 ] we investigated the I – V and C /( G/ω )– V properties of PEI functionalized and N‐doped GQDs without Gd at frequency range 1 kHz to 2 MHz in the voltage range of −3 to +7 V. The Gd‐free PEI@N‐GQDs sample showed the negative capacitance (NC) behavior at low frequencies. In this work, both the effect of gadolinium on the electrical properties of GdNPs/PEI@N‐GQDs‐based diode and surface states/trap levels characterizations were presented by the I – V and C /( G / ω )– V technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V.…”

Section: Introductionmentioning

confidence: 99%

Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode

Orhan

Anter

Ulusoy

et al. 2023

Adv Elect Materials

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Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or synthetic methods may lead to new applications. Gadolinium‐doped polyethyleneimine (PEI) functionalized and nitrogen‐doped graphene quantum dots (GdNPs‐PEI@N‐GQDs) are synthesized by a hydrothermal method to determine how doping carbon‐based materials with Gd alters the electrical properties of the structure. The electrical properties of the GdNPs/PEI@N‐GQDs nanocomposite‐based diode are investigated using the current–voltage (I–V) technique and the capacitance and conductance voltage (C–V & G/ω–V) technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V. The rectification ratio (RR) is found to be 14 at a voltage of ±5 V. The rectifying behavior of the diode changes to an ohmic behavior after doping with Gd, compared to the Gd‐free PEI@N‐GQDs sample (2.8 × 104 at ±5 V). The results are expected to have an impact on the understanding of carbon‐based electronics technology.

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Enhancement of physical properties of nebulizer spray-pyrolyzed PbS thin films for Optoelectronic device application: an effect of Ag doping

Mohanraj¹,

Aejitha²,

Govindaraj³

et al. 2023

J Mater Sci: Mater Electron

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PEI N-doped graphene quantum dots/p-type silicon Schottky diode

Cited by 11 publications

References 44 publications

Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure

Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure

Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode

Enhancement of physical properties of nebulizer spray-pyrolyzed PbS thin films for Optoelectronic device application: an effect of Ag doping

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