Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode

Abstract

Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or synthetic methods may lead to new applications. Gadolinium‐doped polyethyleneimine (PEI) functionalized and nitrogen‐doped graphene quantum dots (GdNPs‐PEI@N‐GQDs) are synthesized by a hydrothermal method to determine how doping carbon‐based materials with Gd alters the electrical properties of the structure. The electrical properties of the GdNPs/PEI@N‐GQDs nanocomposite‐based diode are investigated using the current–voltage (I–V) technique and the capacitance and conductance voltage (C–V & G/ω–V) technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V. The rectification ratio (RR) is found to be 14 at a voltage of ±5 V. The rectifying behavior of the diode changes to an ohmic behavior after doping with Gd, compared to the Gd‐free PEI@N‐GQDs sample (2.8 × 104 at ±5 V). The results are expected to have an impact on the understanding of carbon‐based electronics technology.

Palladium Metal Nanocomposites Based on PEI-Functionalized Nitrogen-Doped Graphene Quantum Dots: Synthesis, Characterization, Density Functional Theory Modeling, and Cell Cycle Arrest Effects on Human Ovarian Cancer Cells

“…PEI N-GQDs have been successfully synthesized using a hydrothermal method. , Citric acid monohydrate (2.31 g, 10.00 mmol) and PEI (2.62 g, 1.00 mmol) were dissolved in 50 mL of deionized water, placed in a Teflon container, and placed in an autoclave. The autoclave was kept in an oven at 200 °C for 18 h. The suspension products in the autoclave cooled to room temperature were centrifuged at 12,000 rpm for 10 min, and the nanoparticles were collected.…”

Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions

“…PEI-functionalized N-doped GQDs were successfully synthesized by a hydrothermal process, which is a green method. ,, The CA (1.80 g, 8.57 mmol) and PEI (3.71 g, 2.85 mmol) were dissolved in 50 mL of deionized water in a Teflon container and placed in an autoclave. The autoclave was kept in an oven at 200 °C for 18 h. The suspension products in the autoclave cooled to room temperature were centrifuged at 12000 rpm for 10 min, and nanoparticles were collected.…”

“…Berktaşet al investigated the I−V 34 and C/(G/ω)-V 35 properties of the PEI-N GQDs nanocomposite-based diode across a frequency range of 1 kHz to 2 MHz and voltage range of −3 to +7 V. Orhan et al examined the electrical properties and photoluminescence quantum yield (PLQY) of PEI-N GQDs doped with the rare earth element Gd. 9 The PLQYs of GdNPs PEI-N GQDs (35.96%) were compared with those of the Gd-free PEI-N GQDs sample (7.60%), revealing a 470% increase in quantum efficiency for the Gd-doped sample. Additionally, it has been noted that the Gd-free PEI-N GQDs sample exhibits a good rectification ratio (RR: 2.8 × 10 4 , ± 5 V), whereas, after Gd doping, the diode demonstrates ohmic behavior (RR: 14, ± 5 V).…”

“…The synthesis of PEI-N GQDs is also detailed in our previous work. 9,34,35 For the synthesis of La(OH) 3 nanoparticles and their nanocomposites, a solution of PEI-N GQDs (1 g) in 100 mL water was added to a 250 mL round-bottom flask. Then, 20 mL of a 0.1 M La(NO 3 ) 3 solution was added into the PEI-N GQDs mixture.…”

“…Technological progress largely depends on the development of semiconductor-based devices. The Schottky barrier diode (SBD) is formed by the junction of a metal with a semiconductor and is very useful in various applications like rectifiers, filters, and integrated circuits. − The SBD can include a native thin interface between the metal and the semiconductor that converts the MS structure into a metal–interlayer–semiconductor (MIS) structure. − The performance, stability, and reliability of the SBD are significantly influenced by this interlayer, which is crucial for the regulation of electrical parameters. − Lately, there has been an increasing interest in SBD that includes a carbon nanostructured layer inserted between a metal and semiconductor. Carbon-based nanostructures, in particular graphene quantum dots ( GQDs ), have had a profound impact on several fields including optoelectronic devices, biosensors, and energy conversion systems …”