Peculiarities of jumping electroconductivity in bismuth oxide films

Vidadi, Yu. A.; Guseinov, Ya. Yu.; Bagiev, V. E.; Rafiev, T.Yu.

doi:10.1016/0921-4526(91)90473-r

Physica B: Condensed Matter

1991

DOI: 10.1016/0921-4526(91)90473-r

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Peculiarities of jumping electroconductivity in bismuth oxide films

Yu. A. Vidadi¹,

Ya. Yu. Guseinov²,

V. E. Bagiev³

et al.

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Cited by 4 publications

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“…It is obvious that the distribution of oxygen vacancies is still controversial. For the discussion on energy bands in δ-Bi 2 O 3 , in addition, the LMTO calculation gave metallic characteristics [13], and measurements of the conduction in thin Bi 2 O 3 films indicated a finite density of states (DOS) at the Fermi level [16]. On the contrary, selfconsistent complete neglect of differential overlap calculations indicated a considerable band gap in δ-Bi 2 O 3 [17].…”

mentioning

confidence: 98%

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

Zhong

Wang

Dai

et al. 2008

Physica Status Solidi (b)

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The oxygen vacancy configurations and electronic structures of δ‐Bi2O3 have been studied using the ab initio calculation full‐potential linearized augmented plane‐wave (FPLAPW) method and considering the relativistic effect in Bi atoms in terms of spin–orbital coupling. Three vacancy structures, 〈111〉, 〈110〉 and 〈100〉, were analysed. It was found that the layered δ‐Bi2O3 with 〈110〉 vacancy alignment is the most stable. An indirect band gap of 0.46 eV was observed for this structure. Additionally, the role of lone‐pair electrons as well as polarization during the diffusion of oxygen atoms have been investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 98%

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

Zhong

Wang

Dai

et al. 2008

Physica Status Solidi (b)

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The doping effects in δ‐Bi₂O₃ oxide ionic conductor

Zhong¹,

Wang

Zhang

2008

Physica Status Solidi (b)

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The structural stability and oxygen ionic movement in doped δ‐phase Bi2O3 have been investigated in terms of density‐functional theory using the full‐potential linearized augmented plane‐wave method. With variations of impurity concentration in supercell Bi16–x Mx O24, total energies and densities of states were calculated for different impurities M. Doped with Ca, Sr, La, Gd or Sm, the ionic conductivity monotonically decreases, while an initial increase in ionic conductivity followed by a decrease is observed when doped with Y, Tb, Dy, Er or Tm. A maximum conductivity is obtained with enhancing impurity concentration x. Our results support the mechanism of effective oxygen vacancies. It is also found that the system is more stable when the distance between impurities is larger. Additionally, the more stabilized δ‐phase Bi2O3 is obtained by doping rare‐earth atoms. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO

Guan

Zhang

Wang

et al. 2017

Materials Science in Semiconductor Processing

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Peculiarities of jumping electroconductivity in bismuth oxide films

Cited by 4 publications

References 9 publications

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

The doping effects in δ‐Bi₂O₃ oxide ionic conductor

Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO

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Peculiarities of jumping electroconductivity in bismuth oxide films

Cited by 4 publications

References 9 publications

Oxygen vacancy configuration of δ‐Bi2O3: an ab initio study

Oxygen vacancy configuration of δ‐Bi2O3: an ab initio study

The doping effects in δ‐Bi2O3 oxide ionic conductor

Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO

Contact Info

Product

Resources

About

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

Oxygen vacancy configuration of δ‐Bi₂O₃: an ab initio study

The doping effects in δ‐Bi₂O₃ oxide ionic conductor