Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP

Ivey, Douglas G.; Jian, Ping; Wan, Li; Bruce, Robert A.; Eicher, S.; Blaauw, C.

doi:10.1007/bf02651899

Cited by 32 publications

(19 citation statements)

References 22 publications

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“…Alternative p-type contacts with better morphology have been reported using several approaches. One such contact involves the use of Pd/Zn/Pd/Au [62]. P d 2 W forms at low temperatures followed by PdZn at 250OC.…”

Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g. GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n-and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A

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Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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“…Additionally, many contact recipes developed for bulk semiconductors are based on hightemperature annealing, which leads to compounds forming and local drive-in of dopants which have been added to the metal layers. For example, a Pd/Zn/Pd/Au combination has been used for ohmic contacts to bulk p-type InP [123]. At a temperature of around 400 ⁰C, Pd reacts with InP and the Zn is driven into the InP since the second Pd layer acts as a cap.…”

Section: Electrical Methodsmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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“…One approach was to use near-noble transition metals such as Pd and Ni whose reactivity with the native oxide are relatively high. [4][5][6][7] Another approach was to control the native oxide: in the case of AuZn contacts, Au and Zn were expected to diffuse into InP easily at lower temperatures and deep protrusions were not expected to be generated if there was no native oxide layer at the AuZn/InP interface. Prior to deposition several kinds of chemical etching to remove the contaminants and the native oxides grown on the InP surface were tried, however similar characteristics of AuZn ͑AuBe͒ contacts were reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

Yamaguchi

Asamizu

Okada

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The electrical properties of the Sb/Zn/Au/Nb ohmic contacts to p-type InP were investigated, where a slash (/) indicates the deposition sequence. The first Sb layer improved the contact resistivity and reduced the optimum annealing temperature, compared with the Au/Zn/Au/Nb contacts whose first layer was Au. The minimum contact resistivity of 4×10−5 Ω cm2 was obtained from the Sb(3 nm)/Zn(5 nm)/Au(10 nm)/Nb(50 nm) contacts annealed at 325 °C for 2 min. The interfacial microstructure was studied using the cross-sectional transmission electron microscope. It was considered that the deposited Sb deoxidized and removed the native oxides of the InP surface and that facilitated the upper Au and Zn diffusion into InP.

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Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP

Cited by 32 publications

References 22 publications

A survey of ohmic contacts to III-V compound semiconductors

A survey of ohmic contacts to III-V compound semiconductors

Doping of semiconductor nanowires

Effect of the first antimony layer on AuZn ohmic contacts to p-type InP

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